Three dimensional analytical subthreshold model for non-rectangular cross-section FinFETs

Xusheng Wu; Qiang Chen; Philip Ching Ho Chan; Mansun Chan

Three dimensional analytical subthreshold model for non-rectangular cross-section FinFETs

Xusheng Wu
, Qiang Chen
, Philip Ching Ho Chan
, Mansun Chan

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

Abstract

The subthreshold characteristics of FinFET's with non-rectangular fin cross-section are investigated using evanescent-mode analysis. A three-dimensional analytical subthreshold conduction model is developed by applying the superposition principle to a two-dimensional model for ideal rectangular structures. The results from the analytical model are compared to three-dimensional numerical device simulations with good agreement. The model can be used to predict fabrication technology requirement in the scaling of a realistic nano-soaled FinFET's.

Original language	English
Title of host publication	International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT
Pages	1200-1203
Number of pages	4
Publication status	Published - 1 Dec 2004
Externally published	Yes
Event	2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 - Beijing, China Duration: 18 Oct 2004 → 21 Oct 2004

Conference

Conference	2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004
Country/Territory	China
City	Beijing
Period	18/10/04 → 21/10/04

ASJC Scopus subject areas

General Engineering

Cite this

@inproceedings{3ff50b9c9d2a4bb4accd964a63c3dbaf,

title = "Three dimensional analytical subthreshold model for non-rectangular cross-section FinFETs",

abstract = "The subthreshold characteristics of FinFET's with non-rectangular fin cross-section are investigated using evanescent-mode analysis. A three-dimensional analytical subthreshold conduction model is developed by applying the superposition principle to a two-dimensional model for ideal rectangular structures. The results from the analytical model are compared to three-dimensional numerical device simulations with good agreement. The model can be used to predict fabrication technology requirement in the scaling of a realistic nano-soaled FinFET's.",

author = "Xusheng Wu and Qiang Chen and Chan, \{Philip Ching Ho\} and Mansun Chan",

year = "2004",

month = dec,

day = "1",

language = "English",

pages = "1200--1203",

booktitle = "International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT",

note = "2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 ; Conference date: 18-10-2004 Through 21-10-2004",

}

Wu, X, Chen, Q, Chan, PCH & Chan, M 2004, Three dimensional analytical subthreshold model for non-rectangular cross-section FinFETs. in International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT. pp. 1200-1203, 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004, Beijing, China, 18/10/04.

Three dimensional analytical subthreshold model for non-rectangular cross-section FinFETs. / Wu, Xusheng; Chen, Qiang; Chan, Philip Ching Ho et al.
International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT. 2004. p. 1200-1203.

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

TY - GEN

T1 - Three dimensional analytical subthreshold model for non-rectangular cross-section FinFETs

AU - Wu, Xusheng

AU - Chen, Qiang

AU - Chan, Philip Ching Ho

AU - Chan, Mansun

PY - 2004/12/1

Y1 - 2004/12/1

N2 - The subthreshold characteristics of FinFET's with non-rectangular fin cross-section are investigated using evanescent-mode analysis. A three-dimensional analytical subthreshold conduction model is developed by applying the superposition principle to a two-dimensional model for ideal rectangular structures. The results from the analytical model are compared to three-dimensional numerical device simulations with good agreement. The model can be used to predict fabrication technology requirement in the scaling of a realistic nano-soaled FinFET's.

AB - The subthreshold characteristics of FinFET's with non-rectangular fin cross-section are investigated using evanescent-mode analysis. A three-dimensional analytical subthreshold conduction model is developed by applying the superposition principle to a two-dimensional model for ideal rectangular structures. The results from the analytical model are compared to three-dimensional numerical device simulations with good agreement. The model can be used to predict fabrication technology requirement in the scaling of a realistic nano-soaled FinFET's.

UR - https://www.scopus.com/pages/publications/21644468968

M3 - Conference article published in proceeding or book

SP - 1200

EP - 1203

BT - International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

T2 - 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004

Y2 - 18 October 2004 through 21 October 2004

ER -

Three dimensional analytical subthreshold model for non-rectangular cross-section FinFETs

Abstract

Conference

ASJC Scopus subject areas

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