Three dimensional analytical subthreshold model for non-rectangular cross-section FinFETs

Xusheng Wu, Qiang Chen, Philip Ching Ho Chan, Mansun Chan

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

Abstract

The subthreshold characteristics of FinFET's with non-rectangular fin cross-section are investigated using evanescent-mode analysis. A three-dimensional analytical subthreshold conduction model is developed by applying the superposition principle to a two-dimensional model for ideal rectangular structures. The results from the analytical model are compared to three-dimensional numerical device simulations with good agreement. The model can be used to predict fabrication technology requirement in the scaling of a realistic nano-soaled FinFET's.
Original languageEnglish
Title of host publicationInternational Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT
Pages1200-1203
Number of pages4
Publication statusPublished - 1 Dec 2004
Externally publishedYes
Event2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 - Beijing, China
Duration: 18 Oct 200421 Oct 2004

Conference

Conference2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004
Country/TerritoryChina
CityBeijing
Period18/10/0421/10/04

ASJC Scopus subject areas

  • Engineering(all)

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