Abstract
Thin film of Sb(111) was grown on GaAs(001) substrate by molecular beam epitaxy. The growth process of the film was characterized in -situ by reflective high energy electron diffraction and the film structure was investigated by transmission electron microscrope. The resistivity as a function of growth temperature was measured by van de Pauw method. We have observed the quantum size effect in Sb film grown on GaAs substrate.
Original language | English |
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Pages (from-to) | 1899 |
Number of pages | 1 |
Journal | Wuli Xuebao/Acta Physica Sinica |
Volume | 47 |
Issue number | 11 |
Publication status | Published - 1 Dec 1998 |
ASJC Scopus subject areas
- General Physics and Astronomy