Abstract
Thin film of Sb(111) was grown on GaAs(001) substrate by molecular beam epitaxy. The growth process of the film was characterized in -situ by reflective high energy electron diffraction and the film structure was investigated by transmission electron microscrope. The resistivity as a function of growth temperature was measured by van de Pauw method. We have observed the quantum size effect in Sb film grown on GaAs substrate.
| Original language | English |
|---|---|
| Pages (from-to) | 1899 |
| Number of pages | 1 |
| Journal | Wuli Xuebao/Acta Physica Sinica |
| Volume | 47 |
| Issue number | 11 |
| Publication status | Published - 1 Dec 1998 |
ASJC Scopus subject areas
- General Physics and Astronomy