Thin film of Sb(111) was grown on GaAs(001) substrate by molecular beam epitaxy. The growth process of the film was characterized in -situ by reflective high energy electron diffraction and the film structure was investigated by transmission electron microscrope. The resistivity as a function of growth temperature was measured by van de Pauw method. We have observed the quantum size effect in Sb film grown on GaAs substrate.
|Number of pages||1|
|Journal||Wuli Xuebao/Acta Physica Sinica|
|Publication status||Published - 1 Dec 1998|
ASJC Scopus subject areas
- Physics and Astronomy(all)