Thin film transistors based on sputtered silicon and gate oxide films

Emil V. Jelenkovic; K. Y. Tong; Chung Wo Ong

Thin film transistors based on sputtered silicon and gate oxide films

Emil V. Jelenkovic, K. Y. Tong, Chung Wo Ong

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

4 Citations (Scopus)

Abstract

In this work furnace crystallization of sputtered silicon films was investigated in the temperature range from 600 to 1250°C. They were characterized by XRD, TEM and ESR. The crystallization process was analyzed from the structural zone model [5], and inclusion of argon and oxygen [7]. Electrical properties of high temperature crystallized Si-film TFT with sputtered silicon dioxide were correlated to crystallization parameters. Such TFTs exhibit high level of electrical stability.

Original language	English
Title of host publication	Proceedings of the IEEE Hong Kong Electron Devices Meeting
Publisher	IEEE
Pages	41-44
Number of pages	4
Publication status	Published - 1 Dec 1996
Event	Proceedings of the 1996 3rd IEEE Hong Kong Electron Devices Meeting - Hong Kong, Hong Kong Duration: 29 Jun 1996 → 29 Jun 1996

Conference

Conference	Proceedings of the 1996 3rd IEEE Hong Kong Electron Devices Meeting
Country/Territory	Hong Kong
City	Hong Kong
Period	29/06/96 → 29/06/96

ASJC Scopus subject areas

Engineering(all)

Cite this

@inproceedings{fd1b9d140d5442d3a24b262ebdda08fc,

title = "Thin film transistors based on sputtered silicon and gate oxide films",

abstract = "In this work furnace crystallization of sputtered silicon films was investigated in the temperature range from 600 to 1250°C. They were characterized by XRD, TEM and ESR. The crystallization process was analyzed from the structural zone model [5], and inclusion of argon and oxygen [7]. Electrical properties of high temperature crystallized Si-film TFT with sputtered silicon dioxide were correlated to crystallization parameters. Such TFTs exhibit high level of electrical stability.",

author = "Jelenkovic, {Emil V.} and Tong, {K. Y.} and Ong, {Chung Wo}",

year = "1996",

month = dec,

day = "1",

language = "English",

pages = "41--44",

booktitle = "Proceedings of the IEEE Hong Kong Electron Devices Meeting",

publisher = "IEEE",

address = "United States",

note = "Proceedings of the 1996 3rd IEEE Hong Kong Electron Devices Meeting ; Conference date: 29-06-1996 Through 29-06-1996",

}

TY - GEN

T1 - Thin film transistors based on sputtered silicon and gate oxide films

AU - Jelenkovic, Emil V.

AU - Tong, K. Y.

AU - Ong, Chung Wo

PY - 1996/12/1

Y1 - 1996/12/1

N2 - In this work furnace crystallization of sputtered silicon films was investigated in the temperature range from 600 to 1250°C. They were characterized by XRD, TEM and ESR. The crystallization process was analyzed from the structural zone model [5], and inclusion of argon and oxygen [7]. Electrical properties of high temperature crystallized Si-film TFT with sputtered silicon dioxide were correlated to crystallization parameters. Such TFTs exhibit high level of electrical stability.

AB - In this work furnace crystallization of sputtered silicon films was investigated in the temperature range from 600 to 1250°C. They were characterized by XRD, TEM and ESR. The crystallization process was analyzed from the structural zone model [5], and inclusion of argon and oxygen [7]. Electrical properties of high temperature crystallized Si-film TFT with sputtered silicon dioxide were correlated to crystallization parameters. Such TFTs exhibit high level of electrical stability.

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M3 - Conference article published in proceeding or book

SP - 41

EP - 44

BT - Proceedings of the IEEE Hong Kong Electron Devices Meeting

PB - IEEE

T2 - Proceedings of the 1996 3rd IEEE Hong Kong Electron Devices Meeting

Y2 - 29 June 1996 through 29 June 1996

ER -

Thin film transistors based on sputtered silicon and gate oxide films

Abstract

Conference

ASJC Scopus subject areas

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