Thin film transistors based on sputtered silicon and gate oxide films

Emil V. Jelenkovic, K. Y. Tong, Chung Wo Ong

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

4 Citations (Scopus)

Abstract

In this work furnace crystallization of sputtered silicon films was investigated in the temperature range from 600 to 1250°C. They were characterized by XRD, TEM and ESR. The crystallization process was analyzed from the structural zone model [5], and inclusion of argon and oxygen [7]. Electrical properties of high temperature crystallized Si-film TFT with sputtered silicon dioxide were correlated to crystallization parameters. Such TFTs exhibit high level of electrical stability.
Original languageEnglish
Title of host publicationProceedings of the IEEE Hong Kong Electron Devices Meeting
PublisherIEEE
Pages41-44
Number of pages4
Publication statusPublished - 1 Dec 1996
EventProceedings of the 1996 3rd IEEE Hong Kong Electron Devices Meeting - Hong Kong, Hong Kong
Duration: 29 Jun 199629 Jun 1996

Conference

ConferenceProceedings of the 1996 3rd IEEE Hong Kong Electron Devices Meeting
CountryHong Kong
CityHong Kong
Period29/06/9629/06/96

ASJC Scopus subject areas

  • Engineering(all)

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