Thin film field-effect phototransistors from bandgap-tunable, solution-processed, few-layer reduced graphene oxide films

Haixin Chang; Zhenhua Sun; Qinghong Yuan; Feng Ding; Xiaoming Tao; Feng Yan; Zijian Zheng

doi:10.1002/adma.201002229

Thin film field-effect phototransistors from bandgap-tunable, solution-processed, few-layer reduced graphene oxide films

Haixin Chang, Zhenhua Sun, Qinghong Yuan, Feng Ding, Xiaoming Tao, Feng Yan, Zijian Zheng

Research output: Journal article publication › Journal article › Academic research › peer-review

173 Citations (Scopus)

Abstract

Thin film field-effect phototransistors (FETs) can be developed from bandgap-tunable, solution-processed, few-layer reduced graphene oxide (FRGO) films. Large-area FRGO films with tunable bandgaps ranging from 2.2 eV to 0.5 eV can be achieved readily by solution-processing technique such as spin-coating. The electronic and optoelectronic properties of FRGO FETs are found to be closely related to their bandgap energy. The resulting phototransistor has great application potential in the field of photodetection. KGaA, Weinheim.

Original language	English
Pages (from-to)	4872-4876
Number of pages	5
Journal	Advanced Materials
Volume	22
Issue number	43
DOIs	https://doi.org/10.1002/adma.201002229
Publication status	Published - 16 Nov 2010

Keywords

bandgap
field-effect
graphene
phototransistor
solution processable

ASJC Scopus subject areas

General Materials Science
Mechanics of Materials
Mechanical Engineering

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10.1002/adma.201002229

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abstract = "Thin film field-effect phototransistors (FETs) can be developed from bandgap-tunable, solution-processed, few-layer reduced graphene oxide (FRGO) films. Large-area FRGO films with tunable bandgaps ranging from 2.2 eV to 0.5 eV can be achieved readily by solution-processing technique such as spin-coating. The electronic and optoelectronic properties of FRGO FETs are found to be closely related to their bandgap energy. The resulting phototransistor has great application potential in the field of photodetection. KGaA, Weinheim.",

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AU - Chang, Haixin

AU - Sun, Zhenhua

AU - Yuan, Qinghong

AU - Ding, Feng

AU - Tao, Xiaoming

AU - Yan, Feng

AU - Zheng, Zijian

PY - 2010/11/16

Y1 - 2010/11/16

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AB - Thin film field-effect phototransistors (FETs) can be developed from bandgap-tunable, solution-processed, few-layer reduced graphene oxide (FRGO) films. Large-area FRGO films with tunable bandgaps ranging from 2.2 eV to 0.5 eV can be achieved readily by solution-processing technique such as spin-coating. The electronic and optoelectronic properties of FRGO FETs are found to be closely related to their bandgap energy. The resulting phototransistor has great application potential in the field of photodetection. KGaA, Weinheim.

KW - bandgap

KW - field-effect

KW - graphene

KW - phototransistor

KW - solution processable

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ER -

Thin film field-effect phototransistors from bandgap-tunable, solution-processed, few-layer reduced graphene oxide films

Abstract

Keywords

ASJC Scopus subject areas

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