Thin film field-effect phototransistors from bandgap-tunable, solution-processed, few-layer reduced graphene oxide films

Haixin Chang, Zhenhua Sun, Qinghong Yuan, Feng Ding, Xiaoming Tao, Feng Yan, Zijian Zheng

Research output: Journal article publicationJournal articleAcademic researchpeer-review

151 Citations (Scopus)

Abstract

Thin film field-effect phototransistors (FETs) can be developed from bandgap-tunable, solution-processed, few-layer reduced graphene oxide (FRGO) films. Large-area FRGO films with tunable bandgaps ranging from 2.2 eV to 0.5 eV can be achieved readily by solution-processing technique such as spin-coating. The electronic and optoelectronic properties of FRGO FETs are found to be closely related to their bandgap energy. The resulting phototransistor has great application potential in the field of photodetection. KGaA, Weinheim.
Original languageEnglish
Pages (from-to)4872-4876
Number of pages5
JournalAdvanced Materials
Volume22
Issue number43
DOIs
Publication statusPublished - 16 Nov 2010

Keywords

  • bandgap
  • field-effect
  • graphene
  • phototransistor
  • solution processable

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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