Thin film field-effect phototransistors from bandgap-tunable, solution-processed, few-layer reduced graphene oxide films

Haixin Chang; Zhenhua Sun; Qinghong Yuan; Feng Ding; Xiaoming Tao; Feng Yan; Zijian Zheng

doi:10.1002/adma.201002229

Thin film field-effect phototransistors from bandgap-tunable, solution-processed, few-layer reduced graphene oxide films

Haixin Chang, Zhenhua Sun, Qinghong Yuan, Feng Ding, Xiaoming Tao, Feng Yan, Zijian Zheng

Research output: Journal article publication › Journal article › Academic research › peer-review

163 Citations (Scopus)

Abstract

Thin film field-effect phototransistors (FETs) can be developed from bandgap-tunable, solution-processed, few-layer reduced graphene oxide (FRGO) films. Large-area FRGO films with tunable bandgaps ranging from 2.2 eV to 0.5 eV can be achieved readily by solution-processing technique such as spin-coating. The electronic and optoelectronic properties of FRGO FETs are found to be closely related to their bandgap energy. The resulting phototransistor has great application potential in the field of photodetection. KGaA, Weinheim.

Original language	English
Pages (from-to)	4872-4876
Number of pages	5
Journal	Advanced Materials
Volume	22
Issue number	43
DOIs	https://doi.org/10.1002/adma.201002229
Publication status	Published - 16 Nov 2010

Keywords

bandgap
field-effect
graphene
phototransistor
solution processable

ASJC Scopus subject areas

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

More information

10.1002/adma.201002229

Cite this

@article{b1560c14e19c4726bc181a7cb65b3bd2,

title = "Thin film field-effect phototransistors from bandgap-tunable, solution-processed, few-layer reduced graphene oxide films",

abstract = "Thin film field-effect phototransistors (FETs) can be developed from bandgap-tunable, solution-processed, few-layer reduced graphene oxide (FRGO) films. Large-area FRGO films with tunable bandgaps ranging from 2.2 eV to 0.5 eV can be achieved readily by solution-processing technique such as spin-coating. The electronic and optoelectronic properties of FRGO FETs are found to be closely related to their bandgap energy. The resulting phototransistor has great application potential in the field of photodetection. KGaA, Weinheim.",

keywords = "bandgap, field-effect, graphene, phototransistor, solution processable",

author = "Haixin Chang and Zhenhua Sun and Qinghong Yuan and Feng Ding and Xiaoming Tao and Feng Yan and Zijian Zheng",

year = "2010",

month = nov,

day = "16",

doi = "10.1002/adma.201002229",

language = "English",

volume = "22",

pages = "4872--4876",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-Blackwell",

number = "43",

}

TY - JOUR

T1 - Thin film field-effect phototransistors from bandgap-tunable, solution-processed, few-layer reduced graphene oxide films

AU - Chang, Haixin

AU - Sun, Zhenhua

AU - Yuan, Qinghong

AU - Ding, Feng

AU - Tao, Xiaoming

AU - Yan, Feng

AU - Zheng, Zijian

PY - 2010/11/16

Y1 - 2010/11/16

N2 - Thin film field-effect phototransistors (FETs) can be developed from bandgap-tunable, solution-processed, few-layer reduced graphene oxide (FRGO) films. Large-area FRGO films with tunable bandgaps ranging from 2.2 eV to 0.5 eV can be achieved readily by solution-processing technique such as spin-coating. The electronic and optoelectronic properties of FRGO FETs are found to be closely related to their bandgap energy. The resulting phototransistor has great application potential in the field of photodetection. KGaA, Weinheim.

AB - Thin film field-effect phototransistors (FETs) can be developed from bandgap-tunable, solution-processed, few-layer reduced graphene oxide (FRGO) films. Large-area FRGO films with tunable bandgaps ranging from 2.2 eV to 0.5 eV can be achieved readily by solution-processing technique such as spin-coating. The electronic and optoelectronic properties of FRGO FETs are found to be closely related to their bandgap energy. The resulting phototransistor has great application potential in the field of photodetection. KGaA, Weinheim.

KW - bandgap

KW - field-effect

KW - graphene

KW - phototransistor

KW - solution processable

UR - http://www.scopus.com/inward/record.url?scp=78449293089&partnerID=8YFLogxK

U2 - 10.1002/adma.201002229

DO - 10.1002/adma.201002229

M3 - Journal article

C2 - 20827686

SN - 0935-9648

VL - 22

SP - 4872

EP - 4876

JO - Advanced Materials

JF - Advanced Materials

IS - 43

ER -

Thin film field-effect phototransistors from bandgap-tunable, solution-processed, few-layer reduced graphene oxide films

Abstract

Keywords

ASJC Scopus subject areas

More information

Other files and links

Fingerprint

Cite this