TY - JOUR
T1 - Thickness Insensitive Organic Solar Cells with High Figure-of-Merit-X Enabled by Simultaneous D/A Interpenetration and Stratification
AU - Xie, Xiyun
AU - Ma, Ruijie
AU - Luo, Yongmin
AU - Dela Peña, Top Archie
AU - Fong, Patrick Wai Keung
AU - Luo, Dou
AU - Chandran, Hrisheekesh Thachoth
AU - Jia, Tao
AU - Li, Mingjie
AU - Wu, Jiaying
AU - Kyaw, Aung Ko Ko
AU - Li, Gang
N1 - Publisher Copyright:
© 2024 The Author(s). Advanced Energy Materials published by Wiley-VCH GmbH.
PY - 2024/6/14
Y1 - 2024/6/14
N2 - Low cost and printing friendly fabrication of organic solar cells (OSCs) require thick-film devices with simply structured photoactive molecules. Thus, achieving high power conversion efficiency (PCE) for non-fused ring acceptor-based devices with high thickness is of great significance. Herein, by transforming traditional blend casting method to emerging sequential deposition (SD) method, D18:A4T-16 active blend exhibits large efficiency improvement from 8.02% to 14.75% in 300 nm thick devices. Systematic morphological and photophysical characterizations showcase the effectiveness of SD processing in achieving sufficient donor/acceptor interpenetration and vertical stratification, which eliminates the dilemma of charge generation/transport in blend casting films. Meanwhile, D18 bottom layer is proven helpful in realizing fast evaporation of postdeposited poor solvent, resulting in naturally thickened active layer with well-regulated crystallization. Furthermore, a new index to emphasize thick-film devices based on nonfused ring acceptors, called figure-of-merit-X (FoM-X), has been defined. The SD processed D18:A4T-16 devices herein, with 300 nm, 500 nm, and 800 nm thicknesses possess leading FoM-X values.
AB - Low cost and printing friendly fabrication of organic solar cells (OSCs) require thick-film devices with simply structured photoactive molecules. Thus, achieving high power conversion efficiency (PCE) for non-fused ring acceptor-based devices with high thickness is of great significance. Herein, by transforming traditional blend casting method to emerging sequential deposition (SD) method, D18:A4T-16 active blend exhibits large efficiency improvement from 8.02% to 14.75% in 300 nm thick devices. Systematic morphological and photophysical characterizations showcase the effectiveness of SD processing in achieving sufficient donor/acceptor interpenetration and vertical stratification, which eliminates the dilemma of charge generation/transport in blend casting films. Meanwhile, D18 bottom layer is proven helpful in realizing fast evaporation of postdeposited poor solvent, resulting in naturally thickened active layer with well-regulated crystallization. Furthermore, a new index to emphasize thick-film devices based on nonfused ring acceptors, called figure-of-merit-X (FoM-X), has been defined. The SD processed D18:A4T-16 devices herein, with 300 nm, 500 nm, and 800 nm thicknesses possess leading FoM-X values.
KW - nonfused ring acceptor
KW - organic solar cells
KW - power conversion efficiency
KW - sequential deposition
KW - thick film
UR - http://www.scopus.com/inward/record.url?scp=85195858845&partnerID=8YFLogxK
U2 - 10.1002/aenm.202401355
DO - 10.1002/aenm.202401355
M3 - Journal article
AN - SCOPUS:85195858845
SN - 1614-6832
JO - Advanced Energy Materials
JF - Advanced Energy Materials
ER -