TY - JOUR
T1 - Thickness-dependent structural and electromechanical properties of (Na0.85K0.15)0.5Bi0.5TiO3 multilayer thin film-based heterostructures
AU - Wu, Yunyi
AU - Or, Siu Wing
N1 - Funding Information:
This work was supported by the Innovation and Technology Commission of the HKSAR Government to the Hong Kong Branch of National Rail Transit Electrification and Automation Engineering Technology Research Center (1-BBYW), the Research Grants Council of the HKSAR Government (PolyU 5228/13E), and the National Science Foundation of China (51402020).
Funding Information:
This work was supported by the Innovation and Technology Commission of the HKSAR Government to the Hong Kong Branch of National Rail Transit Electrification and Automation Engineering Technology Research Center ( 1-BBYW ), the Research Grants Council of the HKSAR Government ( PolyU 5228/13E ), and the National Science Foundation of China ( 51402020 ).
Publisher Copyright:
© 2018 Elsevier Ltd
PY - 2018/7/5
Y1 - 2018/7/5
N2 - (Na0.85K0.15)0.5Bi0.5TiO3 (NKBT) multilayer thin films with different thicknesses of 100–700 nm, corresponding to 2–14 layers with each layer of ~50 nm thickness, are synthesized on Pt(111)/Ti/SiO2/Si substrates to form Pt/NKBT/Pt/Ti/SiO2/Si heterostructures using different spin-coating and annealing conditions in a modified aqueous sol-gel process. The multilayer thin films spin-coated by two steps (step 1/2) at 600/4000 rpm for 6/30 s and annealed at 700 °C for 5 min with a heating rate of 30 °C/s show a dense, uniform, and continuous morphology as well as a pure perovskite structure with a rhombohedral–tetragonal phase transition at ~140 °C and no preferential orientation in the heterostructures. Their structural and electromechanical properties exhibit consistent improvement trends with increasing thickness from 100 to 550 nm (i.e., 2–11 layers). The 550 nm-thick, 11-layer films demonstrate the best ferroelectric, dielectric, piezoelectric, and electric performance in terms of the highest remnant polarization, saturation polarization, dielectric constant, and effective piezoelectric constant of 18.3 μC/cm2, 53.6 μC/cm2, 463, and 64 pm/V, as well as the lowest coercive field, dielectric loss tangent, and leakage current density of 116 kV/cm, 0.057, and 27 μA/cm2, respectively. The observed thickness-dependent improvement is explained by an interfacial passive layer effect where the motion of both 180° and non-180° domain walls is enhanced in the thicker multilayer thin films by weakening the influence of domain pinning in the interfacial passive layers between the multilayer thin films and the substrates.
AB - (Na0.85K0.15)0.5Bi0.5TiO3 (NKBT) multilayer thin films with different thicknesses of 100–700 nm, corresponding to 2–14 layers with each layer of ~50 nm thickness, are synthesized on Pt(111)/Ti/SiO2/Si substrates to form Pt/NKBT/Pt/Ti/SiO2/Si heterostructures using different spin-coating and annealing conditions in a modified aqueous sol-gel process. The multilayer thin films spin-coated by two steps (step 1/2) at 600/4000 rpm for 6/30 s and annealed at 700 °C for 5 min with a heating rate of 30 °C/s show a dense, uniform, and continuous morphology as well as a pure perovskite structure with a rhombohedral–tetragonal phase transition at ~140 °C and no preferential orientation in the heterostructures. Their structural and electromechanical properties exhibit consistent improvement trends with increasing thickness from 100 to 550 nm (i.e., 2–11 layers). The 550 nm-thick, 11-layer films demonstrate the best ferroelectric, dielectric, piezoelectric, and electric performance in terms of the highest remnant polarization, saturation polarization, dielectric constant, and effective piezoelectric constant of 18.3 μC/cm2, 53.6 μC/cm2, 463, and 64 pm/V, as well as the lowest coercive field, dielectric loss tangent, and leakage current density of 116 kV/cm, 0.057, and 27 μA/cm2, respectively. The observed thickness-dependent improvement is explained by an interfacial passive layer effect where the motion of both 180° and non-180° domain walls is enhanced in the thicker multilayer thin films by weakening the influence of domain pinning in the interfacial passive layers between the multilayer thin films and the substrates.
KW - Heterostructures
KW - Interfacial passive layer
KW - Lead-free piezoelectric
KW - Multilayer thin films
KW - Thickness-dependent properties
UR - https://www.scopus.com/pages/publications/85045553295
U2 - 10.1016/j.matdes.2018.04.012
DO - 10.1016/j.matdes.2018.04.012
M3 - Journal article
AN - SCOPUS:85045553295
SN - 0264-1275
VL - 149
SP - 153
EP - 164
JO - Materials and Design
JF - Materials and Design
ER -