Abstract
Spectroscopic ellipsometry was employed to study the thickness dependence of the optical properties of ZnO thin films. ZnO thin films with a nominal thickness of 100, 200, and 400 nm were deposited by filtered cathodic vacuum arc (FCVA) method. The optical band gap showed a slight blue shift with respect to the bulk value with increasingly thicker ZnO films deposited on Si, while no shift with thickness could be observed for ZnO films deposited on a SiO2/Si substrate, indicating a possible effect of the SiO2buffer layer on the film optical properties. The Urbach tail parameter E0increased as the film thickness is increased, indicating a decrease in the structural disorder with increasing film thickness.
Original language | English |
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Pages (from-to) | 343-346 |
Number of pages | 4 |
Journal | Journal of Materials Science: Materials in Electronics |
Volume | 18 |
Issue number | SUPPL. 1 |
DOIs | |
Publication status | Published - 1 Oct 2007 |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering