Thickness-dependent magnetotransport properties in 1T VSe2 single crystals prepared by chemical vapor deposition

Yunzhou Xue, Yi Zhang, Huichao Wang, Shenghuang Lin, Yanyong Li, Ji Yan Dai, Shu Ping Lau

Research output: Journal article publicationJournal articleAcademic researchpeer-review

7 Citations (Scopus)

Abstract

Two-dimensional (2D) metallic transition metal dichalcogenides (TMDs) exhibit fascinating quantum effects, such as charge-density-wave (CDW) and weak antilocalization (WAL) effect. Herein, low temperature synthesis of 1T phase VSe2 single crystals with thickness ranging from 3 to 41 nm by chemical vapor deposition (CVD) is reported. The VSe2 shows a decreasing phase transition temperature of the CDW when the thickness is decreased. Moreover, low-temperature magnetotransport measurements demonstrate a linear positive and non-saturating magnetoresistance (MR) of 35% from a 35 nm thick VSe2 at 15 T and 2 K due to CDW induce mobility fluctuations. Surprisingly, Kohler's rule analysis of the MR reveals the non-applicability of Kohler's rule for temperature above 50 K indicating that the MR behavior cannot be described in terms of semiclassical transport on a single Fermi surface with a single scattering time. Furthermore, WAL effect is observed in the 4.2 nm thick VSe2 at low magnetic fields at 2 K, revealing the contribution of the quantum interference effect at the 2D limit. The phase coherence length and spin-orbit scattering length were determined to be 73 nm and 18 nm at 2 K, respectively. Our work opens new avenues to study the fundamental quantum phenomena in CVD-deposited TMDs.

Original languageEnglish
Article number145712
JournalNanotechnology
Volume31
Issue number14
DOIs
Publication statusPublished - 17 Jan 2020

Keywords

  • charge density wave
  • chemical vapor deposition
  • magnetoresistance
  • vanadium diselenide
  • weak antilocalization

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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