Thickness-dependent bipolar resistive switching behaviors of NiOxfilms

  • Huaxing X. Zhu
  • , Jinqian Q. Huo
  • , Xiaoyan Y. Qiu
  • , Yiyang Y. Zhang
  • , Ruixue X. Wang
  • , Yan Chen
  • , Chi Man Wong
  • , Hei Man Yau
  • , Jiyan Dai

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

Abstract

Oxygen-rich polycrystalline NiOxfilms were prepared by means of magnetron sputtering. Thickness-dependent bipolar resistive switching behaviors revealed that the 20 nm-thick NiOxfilm presented a clockwise current-voltage loop, while the 60 nm-thick NiOxfilm achieved an anti-clockwise current-voltage loop. Redox reactions between penetrated Ag ions and drifted oxygen ions in the whole 20 nm-thick NiOxfilms resulted in the clockwise current-voltage loops. Filamentary conducting paths composed by oxygen vacancies were responsible for the anti-clockwise resistive switching loops of the 60 nm-thick NiOxfilm.
Original languageEnglish
Title of host publicationMaterials and Technologies for Energy Supply and Environmental Engineering
PublisherTrans Tech Publications Ltd
Pages131-136
Number of pages6
ISBN (Print)9783038356561
DOIs
Publication statusPublished - 1 Jan 2016
EventChinese Materials Conference on Materials and Technologies for Energy Supply and Environmental Engineering, 2015 - Guiyang, China
Duration: 10 Jul 201514 Jul 2015

Publication series

NameMaterials Science Forum
Volume847
ISSN (Print)0255-5476

Conference

ConferenceChinese Materials Conference on Materials and Technologies for Energy Supply and Environmental Engineering, 2015
Country/TerritoryChina
CityGuiyang
Period10/07/1514/07/15

Keywords

  • Bipolar resistive switching
  • NiO film x
  • Thickness-dependence

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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