Thickness-dependent bipolar resistive switching behaviors of NiOxfilms

Huaxing X. Zhu, Jinqian Q. Huo, Xiaoyan Y. Qiu, Yiyang Y. Zhang, Ruixue X. Wang, Yan Chen, Chi Man Wong, Hei Man Yau, Jiyan Dai

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

3 Citations (Scopus)

Abstract

Oxygen-rich polycrystalline NiOxfilms were prepared by means of magnetron sputtering. Thickness-dependent bipolar resistive switching behaviors revealed that the 20 nm-thick NiOxfilm presented a clockwise current-voltage loop, while the 60 nm-thick NiOxfilm achieved an anti-clockwise current-voltage loop. Redox reactions between penetrated Ag ions and drifted oxygen ions in the whole 20 nm-thick NiOxfilms resulted in the clockwise current-voltage loops. Filamentary conducting paths composed by oxygen vacancies were responsible for the anti-clockwise resistive switching loops of the 60 nm-thick NiOxfilm.
Original languageEnglish
Title of host publicationMaterials and Technologies for Energy Supply and Environmental Engineering
PublisherTrans Tech Publications Ltd
Pages131-136
Number of pages6
ISBN (Print)9783038356561
DOIs
Publication statusPublished - 1 Jan 2016
EventChinese Materials Conference on Materials and Technologies for Energy Supply and Environmental Engineering, 2015 - Guiyang, China
Duration: 10 Jul 201514 Jul 2015

Publication series

NameMaterials Science Forum
Volume847
ISSN (Print)0255-5476

Conference

ConferenceChinese Materials Conference on Materials and Technologies for Energy Supply and Environmental Engineering, 2015
CountryChina
CityGuiyang
Period10/07/1514/07/15

Keywords

  • Bipolar resistive switching
  • NiO film x
  • Thickness-dependence

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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