@inproceedings{4576463d34374320aa0f99a464228c08,
title = "Thickness-dependent bipolar resistive switching behaviors of NiOxfilms",
abstract = "Oxygen-rich polycrystalline NiOxfilms were prepared by means of magnetron sputtering. Thickness-dependent bipolar resistive switching behaviors revealed that the 20 nm-thick NiOxfilm presented a clockwise current-voltage loop, while the 60 nm-thick NiOxfilm achieved an anti-clockwise current-voltage loop. Redox reactions between penetrated Ag ions and drifted oxygen ions in the whole 20 nm-thick NiOxfilms resulted in the clockwise current-voltage loops. Filamentary conducting paths composed by oxygen vacancies were responsible for the anti-clockwise resistive switching loops of the 60 nm-thick NiOxfilm.",
keywords = "Bipolar resistive switching, NiO film x, Thickness-dependence",
author = "Zhu, {Huaxing X.} and Huo, {Jinqian Q.} and Qiu, {Xiaoyan Y.} and Zhang, {Yiyang Y.} and Wang, {Ruixue X.} and Yan Chen and Wong, {Chi Man} and Yau, {Hei Man} and Jiyan Dai",
year = "2016",
month = jan,
day = "1",
doi = "10.4028/www.scientific.net/MSF.847.131",
language = "English",
isbn = "9783038356561",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "131--136",
booktitle = "Materials and Technologies for Energy Supply and Environmental Engineering",
note = "Chinese Materials Conference on Materials and Technologies for Energy Supply and Environmental Engineering, 2015 ; Conference date: 10-07-2015 Through 14-07-2015",
}