The effect of charge trapping on the performance of sectorial Split-Drain Magnetic Field Effect Transistor (SD-MAGFET) under the influence of magnetic field is examined based on conventional capacitance measurement techniques upon different magnetic field strength and thermal conditions. The experimental results confirmed the charge trapping effect in sectorial SD-MAGFET is magnetic field and temperature dependent, where the charge trapping sites are localized at the channel boundary, which verifies the conjecture of trap-assisted magnetic sensitivity hysteresis and deterioration of the device found in recent literatures. The results of the study are useful to sectorial SD-MAGFET in high performance magnetic sensing applications.
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Surfaces, Coatings and Films
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Safety, Risk, Reliability and Quality