Thermal annealing effect on electrical characteristics of CuPc thin-film transistors on glass with ZrO2as gate dielectric

Wing Man Tang, M. G. Helander, J. Qiu, M. T. Greiner, Z. H. Lu, W. T. Ng

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

1 Citation (Scopus)

Abstract

Organic thin film transistors (OTFTs) with ZrO2as gate dielectric have been fabricated on glass substrates. The gate dielectric is annealed in N2at different temperatures to investigate the effects of annealing temperatures on the performance of the OTFTs. The devices show low threshold voltage and small subthreshold slope, and thus are suitable for low-voltage and low-power applications. It is also found that raising the annealing temperature can initially enhance the electrical properties of OTFTs. This is attributed to the improved dielectric and interface quality by the thermal annealing treatment. ZrO2annealed at 150 °C, 250 °C and 350 °C can lower the maximum density of surface states by 8 %, 32 % and 42 % respectively. Further increasing the annealing temperature to 550 °C is found to degrade the device performance. Among the studied devices, OTFTs with ZrO2annealed at 350 °C exhibits the best device performance, such as a small threshold voltage of -0.89 V and a low sub-threshold slope of 1.05 V/decade.
Original languageEnglish
Title of host publicationProceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015
PublisherIEEE
Pages197-200
Number of pages4
ISBN (Electronic)9781479983636
DOIs
Publication statusPublished - 30 Sep 2015
Event11th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015 - Nanyang Executive Center (NEC), Singapore, Singapore
Duration: 1 Jun 20154 Jun 2015

Conference

Conference11th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015
CountrySingapore
CitySingapore
Period1/06/154/06/15

Keywords

  • CuPc
  • High-k dielectric ZrO 2
  • OTFT
  • Thermal annealing

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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