Thermal annealing and temperature dependences of memory effect in organic memory transistor

X. C. Ren, S. M. Wang, Chi Wah Leung, Feng Yan, P. K L Chan

Research output: Journal article publicationJournal articleAcademic researchpeer-review

14 Citations (Scopus)

Abstract

We investigate the annealing and thermal effects of organic non-volatile memory with floating silver nanoparticles by real-time transfer curve measurements. During annealing, the memory window shows shrinkage of 23 due to structural variation of the nanoparticles. However, by increasing the device operating temperature from 20 to 90 °C after annealing, the memory window demonstrates an enlargement up to 100. The differences in the thermal responses are explained and confirmed by the co-existence of electron and hole traps. Our findings provide a better understanding of organic memory performances under various operating temperatures and validate their applications for temperature sensing or thermal memories.
Original languageEnglish
Article number043303
JournalApplied Physics Letters
Volume99
Issue number4
DOIs
Publication statusPublished - 25 Jul 2011

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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