Theory and experiments on r.f. sputtered tin oxide thin-films for gas sensing applications

Zhenan Tang; Guoping Jiang; Philip Ching Ho Chan; Johnny K.O. Sin; Silvanus S. Lau

doi:10.1016/S0925-4005(97)00204-9

Theory and experiments on r.f. sputtered tin oxide thin-films for gas sensing applications

Zhenan Tang, Guoping Jiang, Philip Ching Ho Chan, Johnny K.O. Sin, Silvanus S. Lau

Research output: Journal article publication › Journal article › Academic research › peer-review

22 Citations (Scopus)

Abstract

Material and gas sensing properties of tin oxide thin-films are described in this paper. The thin-films are prepared by r.f. sputtering using tin dioxide target and tin metal target under different sputtering conditions. Rutherford back scattering (RBS) was used to analyze the concentrations of Sn4+and Sn2+species in the sputtered thin-films. The gas sensing properties of the thin-films are interpreted according to the concentration of Sn4+and Sn2+and a mutual transition model.

Original language	English
Pages (from-to)	161-164
Number of pages	4
Journal	Sensors and Actuators, B: Chemical
Volume	43
Issue number	1-3
DOIs	https://doi.org/10.1016/S0925-4005(97)00204-9
Publication status	Published - 1 Jan 1997
Externally published	Yes

Keywords

Gas
Thin-films
Tin oxide

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films
Metals and Alloys
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/S0925-4005(97)00204-9

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abstract = "Material and gas sensing properties of tin oxide thin-films are described in this paper. The thin-films are prepared by r.f. sputtering using tin dioxide target and tin metal target under different sputtering conditions. Rutherford back scattering (RBS) was used to analyze the concentrations of Sn4+and Sn2+species in the sputtered thin-films. The gas sensing properties of the thin-films are interpreted according to the concentration of Sn4+and Sn2+and a mutual transition model.",

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AU - Tang, Zhenan

AU - Jiang, Guoping

AU - Chan, Philip Ching Ho

AU - Sin, Johnny K.O.

AU - Lau, Silvanus S.

PY - 1997/1/1

Y1 - 1997/1/1

N2 - Material and gas sensing properties of tin oxide thin-films are described in this paper. The thin-films are prepared by r.f. sputtering using tin dioxide target and tin metal target under different sputtering conditions. Rutherford back scattering (RBS) was used to analyze the concentrations of Sn4+and Sn2+species in the sputtered thin-films. The gas sensing properties of the thin-films are interpreted according to the concentration of Sn4+and Sn2+and a mutual transition model.

AB - Material and gas sensing properties of tin oxide thin-films are described in this paper. The thin-films are prepared by r.f. sputtering using tin dioxide target and tin metal target under different sputtering conditions. Rutherford back scattering (RBS) was used to analyze the concentrations of Sn4+and Sn2+species in the sputtered thin-films. The gas sensing properties of the thin-films are interpreted according to the concentration of Sn4+and Sn2+and a mutual transition model.

KW - Gas

KW - Thin-films

KW - Tin oxide

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U2 - 10.1016/S0925-4005(97)00204-9

DO - 10.1016/S0925-4005(97)00204-9

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EP - 164

JO - Sensors and Actuators, B: Chemical

JF - Sensors and Actuators, B: Chemical

IS - 1-3

ER -

Theory and experiments on r.f. sputtered tin oxide thin-films for gas sensing applications

Abstract

Keywords

ASJC Scopus subject areas

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