Theoretical investigation of excitonic gain in ZnO-MgxZn1-xO strained quantum wells

A. P. Abiyasa; Siu Fung Yu; W. J. Fan; Shu Ping Lau

doi:10.1109/JQE.2006.872318

Theoretical investigation of excitonic gain in ZnO-Mg_xZn_1-xO strained quantum wells

A. P. Abiyasa, Siu Fung Yu, W. J. Fan, Shu Ping Lau

Research output: Journal article publication › Journal article › Academic research › peer-review

20 Citations (Scopus)

Abstract

Free-excitonic gain of wurtzite ZnO-MgxZn1-xO quantum wells (QWs) is studied theoretically. The valence band structure of ZnO-MgxZn1-xO QWs with the consideration of biaxial strain and exciton-phonon interaction is calculated based on a 6×6 Hamiltonian. From the available experimental data, the band offset ratio and conduction band deformation potential of ZnO-MgxZn1-xO QWs are found to be 60/40 and -6.8 eV, respectively. The influence of biaxial strain on the peak free-excitonic gain of ZnO-MgxZn1-xO QWs for various well-width and mole fraction of Mg is also investigated.

Original language	English
Pages (from-to)	455-463
Number of pages	9
Journal	IEEE Journal of Quantum Electronics
Volume	42
Issue number	5
DOIs	https://doi.org/10.1109/JQE.2006.872318
Publication status	Published - 1 May 2006
Externally published	Yes

Keywords

Excitonic gain
Numerical modeling
Quantum wells (QWs)
Zinc oxide

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

More information

10.1109/JQE.2006.872318

Cite this

@article{bc90fc38db604dc8a749d0ca2ca69752,

title = "Theoretical investigation of excitonic gain in ZnO-MgxZn1-xO strained quantum wells",

abstract = "Free-excitonic gain of wurtzite ZnO-MgxZn1-xO quantum wells (QWs) is studied theoretically. The valence band structure of ZnO-MgxZn1-xO QWs with the consideration of biaxial strain and exciton-phonon interaction is calculated based on a 6×6 Hamiltonian. From the available experimental data, the band offset ratio and conduction band deformation potential of ZnO-MgxZn1-xO QWs are found to be 60/40 and -6.8 eV, respectively. The influence of biaxial strain on the peak free-excitonic gain of ZnO-MgxZn1-xO QWs for various well-width and mole fraction of Mg is also investigated.",

keywords = "Excitonic gain, Numerical modeling, Quantum wells (QWs), Zinc oxide",

author = "Abiyasa, {A. P.} and Yu, {Siu Fung} and Fan, {W. J.} and Lau, {Shu Ping}",

year = "2006",

month = may,

day = "1",

doi = "10.1109/JQE.2006.872318",

language = "English",

volume = "42",

pages = "455--463",

journal = "IEEE Journal of Quantum Electronics",

issn = "0018-9197",

publisher = "IEEE",

number = "5",

}

TY - JOUR

T1 - Theoretical investigation of excitonic gain in ZnO-MgxZn1-xO strained quantum wells

AU - Abiyasa, A. P.

AU - Yu, Siu Fung

AU - Fan, W. J.

AU - Lau, Shu Ping

PY - 2006/5/1

Y1 - 2006/5/1

N2 - Free-excitonic gain of wurtzite ZnO-MgxZn1-xO quantum wells (QWs) is studied theoretically. The valence band structure of ZnO-MgxZn1-xO QWs with the consideration of biaxial strain and exciton-phonon interaction is calculated based on a 6×6 Hamiltonian. From the available experimental data, the band offset ratio and conduction band deformation potential of ZnO-MgxZn1-xO QWs are found to be 60/40 and -6.8 eV, respectively. The influence of biaxial strain on the peak free-excitonic gain of ZnO-MgxZn1-xO QWs for various well-width and mole fraction of Mg is also investigated.

AB - Free-excitonic gain of wurtzite ZnO-MgxZn1-xO quantum wells (QWs) is studied theoretically. The valence band structure of ZnO-MgxZn1-xO QWs with the consideration of biaxial strain and exciton-phonon interaction is calculated based on a 6×6 Hamiltonian. From the available experimental data, the band offset ratio and conduction band deformation potential of ZnO-MgxZn1-xO QWs are found to be 60/40 and -6.8 eV, respectively. The influence of biaxial strain on the peak free-excitonic gain of ZnO-MgxZn1-xO QWs for various well-width and mole fraction of Mg is also investigated.

KW - Excitonic gain

KW - Numerical modeling

KW - Quantum wells (QWs)

KW - Zinc oxide

UR - http://www.scopus.com/inward/record.url?scp=33645764711&partnerID=8YFLogxK

U2 - 10.1109/JQE.2006.872318

DO - 10.1109/JQE.2006.872318

M3 - Journal article

SN - 0018-9197

VL - 42

SP - 455

EP - 463

JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

IS - 5

ER -