Theoretical investigation of excitonic gain in ZnO-MgxZn1-xO strained quantum wells

A. P. Abiyasa, Siu Fung Yu, W. J. Fan, Shu Ping Lau

Research output: Journal article publicationJournal articleAcademic researchpeer-review

21 Citations (Scopus)


Free-excitonic gain of wurtzite ZnO-MgxZn1-xO quantum wells (QWs) is studied theoretically. The valence band structure of ZnO-MgxZn1-xO QWs with the consideration of biaxial strain and exciton-phonon interaction is calculated based on a 6×6 Hamiltonian. From the available experimental data, the band offset ratio and conduction band deformation potential of ZnO-MgxZn1-xO QWs are found to be 60/40 and -6.8 eV, respectively. The influence of biaxial strain on the peak free-excitonic gain of ZnO-MgxZn1-xO QWs for various well-width and mole fraction of Mg is also investigated.
Original languageEnglish
Pages (from-to)455-463
Number of pages9
JournalIEEE Journal of Quantum Electronics
Issue number5
Publication statusPublished - 1 May 2006
Externally publishedYes


  • Excitonic gain
  • Numerical modeling
  • Quantum wells (QWs)
  • Zinc oxide

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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