Abstract
Free-excitonic gain of wurtzite ZnO-MgxZn1-xO quantum wells (QWs) is studied theoretically. The valence band structure of ZnO-MgxZn1-xO QWs with the consideration of biaxial strain and exciton-phonon interaction is calculated based on a 6×6 Hamiltonian. From the available experimental data, the band offset ratio and conduction band deformation potential of ZnO-MgxZn1-xO QWs are found to be 60/40 and -6.8 eV, respectively. The influence of biaxial strain on the peak free-excitonic gain of ZnO-MgxZn1-xO QWs for various well-width and mole fraction of Mg is also investigated.
Original language | English |
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Pages (from-to) | 455-463 |
Number of pages | 9 |
Journal | IEEE Journal of Quantum Electronics |
Volume | 42 |
Issue number | 5 |
DOIs | |
Publication status | Published - 1 May 2006 |
Externally published | Yes |
Keywords
- Excitonic gain
- Numerical modeling
- Quantum wells (QWs)
- Zinc oxide
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering