The resistance degradation of (Ba0.5Sr0.5)TiO3thin films

Feng Yan, P. Bao, X. B. Chen, J. S. Zhu, Y. N. Wang

Research output: Journal article publicationConference articleAcademic researchpeer-review

4 Citations (Scopus)

Abstract

The leakage current and dielectric properties of (Ba0.5Sr0.5)TiO3(BST) thin films prepared by pulsed laser deposition (PLD) were investigated. It was found that leakage currents for positive bias voltage were higher than that for negative bias voltage, which was attributed to the lattice mismatch between bottom Pt electrode and BST thin film. The time-dependent breakdown process under positive voltage was observed, which was interpreted as the increase of the internal electric field in the film near the bottom electrode. However, the internal electric field can be decreased and eventually recovered by applying negative bias voltage. It was found that internal electric field near the interface can influence the capacitance of the BST thin film capacitor. An explanation for the thickness effect of BST thin films was given.
Original languageEnglish
JournalIntegrated Ferroelectrics
Volume33
Issue number1-4
Publication statusPublished - 9 May 2001
Externally publishedYes
Event12th International Symposium on Integrated Ferroelectrics - Aachen, Germany
Duration: 12 Mar 200015 Mar 2000

Keywords

  • Dielectric properties
  • Leakage current
  • Schottky barrier
  • Thin films

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

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