The orientation-selective growth of LaNiO3 films on Si(100) by pulsed laser deposition using a MgO buffer

X. Y. Chen; K. H. Wong; Chee Leung Mak; J. M. Liu; X. B. Yin; M. Wang; Z. G. Liu

doi:10.1007/s003390101048

The orientation-selective growth of LaNiO3 films on Si(100) by pulsed laser deposition using a MgO buffer

X. Y. Chen, K. H. Wong, Chee Leung Mak, J. M. Liu, X. B. Yin, M. Wang, Z. G. Liu

Research output: Journal article publication › Journal article › Academic research › peer-review

9 Citations (Scopus)

Abstract

Highly (100)-oriented, (110)-oriented and polycrystalline LaNiO3 (LNO) films were successfully prepared on Si(100) using an oriented MgO film as a buffer. It was somewhat surprising to find that the orientation relation between the LNO film and the corresponding MgO buffer was: LNO(100)\MgO(110), LNO(110)\MgO(111) and LNO(polycrystalline)\MgO(100). The crystalline quality of the LNO films was shown to be sensitive to the preparation conditions of the MgO buffer. The film surface was very smooth, without micrometer-sized droplets being observed. All LNO films were of metallic conductivity, with a room-temperature resistivities of approximately 250, 280 and 420 μΩ cm for the (110)-oriented, (100)-oriented and polycrystalline LNO, respectively.

Original language	English
Pages (from-to)	545-549
Number of pages	5
Journal	Applied Physics A: Materials Science and Processing
Volume	75
Issue number	4
DOIs	https://doi.org/10.1007/s003390101048
Publication status	Published - 1 Oct 2002

ASJC Scopus subject areas

General Materials Science
Physics and Astronomy (miscellaneous)

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10.1007/s003390101048

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title = "The orientation-selective growth of LaNiO3 films on Si(100) by pulsed laser deposition using a MgO buffer",

abstract = "Highly (100)-oriented, (110)-oriented and polycrystalline LaNiO3 (LNO) films were successfully prepared on Si(100) using an oriented MgO film as a buffer. It was somewhat surprising to find that the orientation relation between the LNO film and the corresponding MgO buffer was: LNO(100)\MgO(110), LNO(110)\MgO(111) and LNO(polycrystalline)\MgO(100). The crystalline quality of the LNO films was shown to be sensitive to the preparation conditions of the MgO buffer. The film surface was very smooth, without micrometer-sized droplets being observed. All LNO films were of metallic conductivity, with a room-temperature resistivities of approximately 250, 280 and 420 μΩ cm for the (110)-oriented, (100)-oriented and polycrystalline LNO, respectively.",

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T1 - The orientation-selective growth of LaNiO3 films on Si(100) by pulsed laser deposition using a MgO buffer

AU - Chen, X. Y.

AU - Wong, K. H.

AU - Mak, Chee Leung

AU - Liu, J. M.

AU - Yin, X. B.

AU - Wang, M.

AU - Liu, Z. G.

PY - 2002/10/1

Y1 - 2002/10/1

N2 - Highly (100)-oriented, (110)-oriented and polycrystalline LaNiO3 (LNO) films were successfully prepared on Si(100) using an oriented MgO film as a buffer. It was somewhat surprising to find that the orientation relation between the LNO film and the corresponding MgO buffer was: LNO(100)\MgO(110), LNO(110)\MgO(111) and LNO(polycrystalline)\MgO(100). The crystalline quality of the LNO films was shown to be sensitive to the preparation conditions of the MgO buffer. The film surface was very smooth, without micrometer-sized droplets being observed. All LNO films were of metallic conductivity, with a room-temperature resistivities of approximately 250, 280 and 420 μΩ cm for the (110)-oriented, (100)-oriented and polycrystalline LNO, respectively.

AB - Highly (100)-oriented, (110)-oriented and polycrystalline LaNiO3 (LNO) films were successfully prepared on Si(100) using an oriented MgO film as a buffer. It was somewhat surprising to find that the orientation relation between the LNO film and the corresponding MgO buffer was: LNO(100)\MgO(110), LNO(110)\MgO(111) and LNO(polycrystalline)\MgO(100). The crystalline quality of the LNO films was shown to be sensitive to the preparation conditions of the MgO buffer. The film surface was very smooth, without micrometer-sized droplets being observed. All LNO films were of metallic conductivity, with a room-temperature resistivities of approximately 250, 280 and 420 μΩ cm for the (110)-oriented, (100)-oriented and polycrystalline LNO, respectively.

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U2 - 10.1007/s003390101048

DO - 10.1007/s003390101048

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JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

IS - 4

ER -

The orientation-selective growth of LaNiO3 films on Si(100) by pulsed laser deposition using a MgO buffer

Abstract

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