The orientation-selective growth of LaNiO3 films on Si(100) by pulsed laser deposition using a MgO buffer

X. Y. Chen, K. H. Wong, Chee Leung Mak, J. M. Liu, X. B. Yin, M. Wang, Z. G. Liu

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9 Citations (Scopus)


Highly (100)-oriented, (110)-oriented and polycrystalline LaNiO3 (LNO) films were successfully prepared on Si(100) using an oriented MgO film as a buffer. It was somewhat surprising to find that the orientation relation between the LNO film and the corresponding MgO buffer was: LNO(100)\MgO(110), LNO(110)\MgO(111) and LNO(polycrystalline)\MgO(100). The crystalline quality of the LNO films was shown to be sensitive to the preparation conditions of the MgO buffer. The film surface was very smooth, without micrometer-sized droplets being observed. All LNO films were of metallic conductivity, with a room-temperature resistivities of approximately 250, 280 and 420 μΩ cm for the (110)-oriented, (100)-oriented and polycrystalline LNO, respectively.
Original languageEnglish
Pages (from-to)545-549
Number of pages5
JournalApplied Physics A: Materials Science and Processing
Issue number4
Publication statusPublished - 1 Oct 2002

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)

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