TY - JOUR
T1 - The enhanced electrical energy storage properties of (Bi0.5Na0.5)TiO3–BaTiO3/graphene oxide heterogeneous structures
AU - Han, Zhuo
AU - Li, Tian
AU - Zheng, Guangping
N1 - Funding Information:
This work was supported by Foshan Xianhu Laboratory of the Advanced Energy Science and Technology Guangdong Laboratory, the Postdoctoral Fellowship Scheme of Hong Kong Polytechnic University (Grant No. #1-YW3F).
Publisher Copyright:
© 2023, The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature.
PY - 2023/1
Y1 - 2023/1
N2 - Heterogeneous structures of lead-free 0.94(Bi0.5Na0.5)TiO3–0.06BaTiO3 solid-solution thin film and few-layer graphene oxide (GO) are prepared by using Langmuir–Blodgett (L–B) method, and their morphology, piezoelectric properties and electrical energy storage performances are investigated. It is found that the electrical breakdown strength of solid-solution thin film is significantly improved due to the covalently bonded GO nanosheets, resulting in the present of local fields that could be counteractive to the applied electric field. The heterostructures possess an outstanding electrical energy storage density as high as 4.26 J cm−3 at elevated temperatures (80–120 °C). The results demonstrate that the development of dielectrics-GO heterostructures is an effective approach in enhancing the energy storage density of dielectric capacitors for their practical applications.
AB - Heterogeneous structures of lead-free 0.94(Bi0.5Na0.5)TiO3–0.06BaTiO3 solid-solution thin film and few-layer graphene oxide (GO) are prepared by using Langmuir–Blodgett (L–B) method, and their morphology, piezoelectric properties and electrical energy storage performances are investigated. It is found that the electrical breakdown strength of solid-solution thin film is significantly improved due to the covalently bonded GO nanosheets, resulting in the present of local fields that could be counteractive to the applied electric field. The heterostructures possess an outstanding electrical energy storage density as high as 4.26 J cm−3 at elevated temperatures (80–120 °C). The results demonstrate that the development of dielectrics-GO heterostructures is an effective approach in enhancing the energy storage density of dielectric capacitors for their practical applications.
UR - http://www.scopus.com/inward/record.url?scp=85146469213&partnerID=8YFLogxK
U2 - 10.1007/s10854-022-09623-6
DO - 10.1007/s10854-022-09623-6
M3 - Journal article
AN - SCOPUS:85146469213
SN - 0957-4522
VL - 34
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 2
M1 - 147
ER -