Keyphrases
Grain Boundary
100%
Large Grain
100%
Thin-film Transistors
100%
Electrical Characteristics
100%
Polycrystalline Thin Films
100%
Device Characteristics
50%
Leakage Current
50%
Channel Width
50%
Grain Boundary Effect
50%
High Performance
25%
Threshold Voltage
25%
Device Sizing
25%
Design Guidelines
25%
Active Regions
25%
Cumulative Distribution
25%
Low Voltage
25%
Metal-induced Crystallization
25%
Short Channel Length
25%
Wide Channels
25%
Channel Length
25%
Device Property
25%
Field-effect Mobility
25%
Enhancement Mechanism
25%
Current Threshold
25%
Slope Effect
25%
Subthreshold Slope
25%
Engineering
Thin-Film Transistor
100%
Polycrystalline
100%
Boundary Effect
66%
Channel Length
66%
Design Guideline
33%
Cumulative Distribution
33%
Subthreshold Slope
33%
Current Threshold
33%
Active Region
33%
Material Science
Grain Boundary
100%
Thin-Film Transistor
100%