The application of carbon nanotubes in CMOS integrated circuits

Philip Ching Ho Chan; Chai Yang; Min Zhang; Yunyi Fu

doi:10.1109/ICSICT.2008.4734596

The application of carbon nanotubes in CMOS integrated circuits

Philip Ching Ho Chan, Chai Yang, Min Zhang, Yunyi Fu

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

2 Citations (Scopus)

Abstract

With the complementary metal-oxide-semiconductor (CMOS) technology approaching its scaling limit, many novel devices and material are being considered to enable further scaling of CMOS. Carbon nanotubes show unique properties and are currently considered as a potential alternative material for nano-CMOS building blocks. Performance of carbon nanotube field effect transistors (CNFET) can be competitive with Si MOSFET in the sub-20nm regime. With its superior material properties, CNT can also function as quantum wire and a critical material for the integrated circuit interconnection. In this talk, we shall present some of the works we have done on applying carbon nanotubes to the CMOS Integrated Circuits in our research group at the Hong Kong University of Science and Technology.

Original language	English
Title of host publication	ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings
Pages	534-536
Number of pages	3
DOIs	https://doi.org/10.1109/ICSICT.2008.4734596
Publication status	Published - 1 Dec 2008
Externally published	Yes
Event	2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008 - Beijing, China Duration: 20 Oct 2008 → 23 Oct 2008

Conference

Conference	2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008
Country	China
City	Beijing
Period	20/10/08 → 23/10/08

ASJC Scopus subject areas

Electrical and Electronic Engineering
Condensed Matter Physics
Electronic, Optical and Magnetic Materials

More information

10.1109/ICSICT.2008.4734596

Cite this

@inproceedings{49ecca1782cd4464b55cf0e829d44c3c,

title = "The application of carbon nanotubes in CMOS integrated circuits",

abstract = "With the complementary metal-oxide-semiconductor (CMOS) technology approaching its scaling limit, many novel devices and material are being considered to enable further scaling of CMOS. Carbon nanotubes show unique properties and are currently considered as a potential alternative material for nano-CMOS building blocks. Performance of carbon nanotube field effect transistors (CNFET) can be competitive with Si MOSFET in the sub-20nm regime. With its superior material properties, CNT can also function as quantum wire and a critical material for the integrated circuit interconnection. In this talk, we shall present some of the works we have done on applying carbon nanotubes to the CMOS Integrated Circuits in our research group at the Hong Kong University of Science and Technology.",

author = "Chan, {Philip Ching Ho} and Chai Yang and Min Zhang and Yunyi Fu",

year = "2008",

month = dec,

day = "1",

doi = "10.1109/ICSICT.2008.4734596",

language = "English",

isbn = "9781424421855",

pages = "534--536",

booktitle = "ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings",

note = "2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008 ; Conference date: 20-10-2008 Through 23-10-2008",

}

Chan, PCH, Yang, C, Zhang, M & Fu, Y 2008, The application of carbon nanotubes in CMOS integrated circuits. in ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings., 4734596, pp. 534-536, 2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008, Beijing, China, 20/10/08. https://doi.org/10.1109/ICSICT.2008.4734596

The application of carbon nanotubes in CMOS integrated circuits. / Chan, Philip Ching Ho; Yang, Chai; Zhang, Min; Fu, Yunyi.

ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings. 2008. p. 534-536 4734596.

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

TY - GEN

T1 - The application of carbon nanotubes in CMOS integrated circuits

AU - Chan, Philip Ching Ho

AU - Yang, Chai

AU - Zhang, Min

AU - Fu, Yunyi

PY - 2008/12/1

Y1 - 2008/12/1

N2 - With the complementary metal-oxide-semiconductor (CMOS) technology approaching its scaling limit, many novel devices and material are being considered to enable further scaling of CMOS. Carbon nanotubes show unique properties and are currently considered as a potential alternative material for nano-CMOS building blocks. Performance of carbon nanotube field effect transistors (CNFET) can be competitive with Si MOSFET in the sub-20nm regime. With its superior material properties, CNT can also function as quantum wire and a critical material for the integrated circuit interconnection. In this talk, we shall present some of the works we have done on applying carbon nanotubes to the CMOS Integrated Circuits in our research group at the Hong Kong University of Science and Technology.

AB - With the complementary metal-oxide-semiconductor (CMOS) technology approaching its scaling limit, many novel devices and material are being considered to enable further scaling of CMOS. Carbon nanotubes show unique properties and are currently considered as a potential alternative material for nano-CMOS building blocks. Performance of carbon nanotube field effect transistors (CNFET) can be competitive with Si MOSFET in the sub-20nm regime. With its superior material properties, CNT can also function as quantum wire and a critical material for the integrated circuit interconnection. In this talk, we shall present some of the works we have done on applying carbon nanotubes to the CMOS Integrated Circuits in our research group at the Hong Kong University of Science and Technology.

UR - http://www.scopus.com/inward/record.url?scp=60649116711&partnerID=8YFLogxK

U2 - 10.1109/ICSICT.2008.4734596

DO - 10.1109/ICSICT.2008.4734596

M3 - Conference article published in proceeding or book

SN - 9781424421855

SP - 534

EP - 536

BT - ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings

T2 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008

Y2 - 20 October 2008 through 23 October 2008

ER -