Abstract
With the complementary metal-oxide-semiconductor (CMOS) technology approaching its scaling limit, many novel devices and material are being considered to enable further scaling of CMOS. Carbon nanotubes show unique properties and are currently considered as a potential alternative material for nano-CMOS building blocks. Performance of carbon nanotube field effect transistors (CNFET) can be competitive with Si MOSFET in the sub-20nm regime. With its superior material properties, CNT can also function as quantum wire and a critical material for the integrated circuit interconnection. In this talk, we shall present some of the works we have done on applying carbon nanotubes to the CMOS Integrated Circuits in our research group at the Hong Kong University of Science and Technology.
Original language | English |
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Title of host publication | ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings |
Pages | 534-536 |
Number of pages | 3 |
DOIs | |
Publication status | Published - 1 Dec 2008 |
Externally published | Yes |
Event | 2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008 - Beijing, China Duration: 20 Oct 2008 → 23 Oct 2008 |
Conference
Conference | 2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008 |
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Country/Territory | China |
City | Beijing |
Period | 20/10/08 → 23/10/08 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics
- Electronic, Optical and Magnetic Materials