The application of carbon nanotubes in CMOS integrated circuits

Philip Ching Ho Chan, Chai Yang, Min Zhang, Yunyi Fu

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

2 Citations (Scopus)

Abstract

With the complementary metal-oxide-semiconductor (CMOS) technology approaching its scaling limit, many novel devices and material are being considered to enable further scaling of CMOS. Carbon nanotubes show unique properties and are currently considered as a potential alternative material for nano-CMOS building blocks. Performance of carbon nanotube field effect transistors (CNFET) can be competitive with Si MOSFET in the sub-20nm regime. With its superior material properties, CNT can also function as quantum wire and a critical material for the integrated circuit interconnection. In this talk, we shall present some of the works we have done on applying carbon nanotubes to the CMOS Integrated Circuits in our research group at the Hong Kong University of Science and Technology.
Original languageEnglish
Title of host publicationICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings
Pages534-536
Number of pages3
DOIs
Publication statusPublished - 1 Dec 2008
Externally publishedYes
Event2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008 - Beijing, China
Duration: 20 Oct 200823 Oct 2008

Conference

Conference2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008
CountryChina
CityBeijing
Period20/10/0823/10/08

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

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