The application of carbon nanotubes in CMOS integrated circuits

Philip Ching Ho Chan

doi:10.1109/ICEPT.2006.359668

The application of carbon nanotubes in CMOS integrated circuits

Philip Ching Ho Chan

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

1 Citation (Scopus)

Abstract

With the complementary metal-oxide-semiconductor (CMOS) technology approaching its scaling limit, many novel devices are being investigated for the replacement of CMOS FET. Among them, carbon nanotubes show unique properties and are currently considered as a promising alternative material for the building blocks of future nanoelectronic. Performance of carbon nanotube field effect transistors (CNFET) can be competitive with Si MOSFET in the sub-20nm regime. With its superior material properties, CNT can also function as quantum wire and critical material for the integrated circuit interconnection. In this paper, we shall present some of the research we have done on the application of carbon nanotubes to the CMOS Integrated Circuits at the Hong Kong University of Science and Technology.

Original language	English
Title of host publication	2006 7th International Conference on Electronics Packaging Technology, ICEPT '06
DOIs	https://doi.org/10.1109/ICEPT.2006.359668
Publication status	Published - 11 Oct 2007
Externally published	Yes
Event	2006 7th International Conference on Electronics Packaging Technology, ICEPT '06 - Shanghai, China Duration: 26 Aug 2006 → 29 Aug 2006

Conference

Conference	2006 7th International Conference on Electronics Packaging Technology, ICEPT '06
Country/Territory	China
City	Shanghai
Period	26/08/06 → 29/08/06

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1109/ICEPT.2006.359668

Cite this

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title = "The application of carbon nanotubes in CMOS integrated circuits",

abstract = "With the complementary metal-oxide-semiconductor (CMOS) technology approaching its scaling limit, many novel devices are being investigated for the replacement of CMOS FET. Among them, carbon nanotubes show unique properties and are currently considered as a promising alternative material for the building blocks of future nanoelectronic. Performance of carbon nanotube field effect transistors (CNFET) can be competitive with Si MOSFET in the sub-20nm regime. With its superior material properties, CNT can also function as quantum wire and critical material for the integrated circuit interconnection. In this paper, we shall present some of the research we have done on the application of carbon nanotubes to the CMOS Integrated Circuits at the Hong Kong University of Science and Technology.",

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AB - With the complementary metal-oxide-semiconductor (CMOS) technology approaching its scaling limit, many novel devices are being investigated for the replacement of CMOS FET. Among them, carbon nanotubes show unique properties and are currently considered as a promising alternative material for the building blocks of future nanoelectronic. Performance of carbon nanotube field effect transistors (CNFET) can be competitive with Si MOSFET in the sub-20nm regime. With its superior material properties, CNT can also function as quantum wire and critical material for the integrated circuit interconnection. In this paper, we shall present some of the research we have done on the application of carbon nanotubes to the CMOS Integrated Circuits at the Hong Kong University of Science and Technology.

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DO - 10.1109/ICEPT.2006.359668

M3 - Conference article published in proceeding or book

SN - 142440620X

SN - 9781424406203

BT - 2006 7th International Conference on Electronics Packaging Technology, ICEPT '06

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Y2 - 26 August 2006 through 29 August 2006

ER -

The application of carbon nanotubes in CMOS integrated circuits

Abstract

Conference

ASJC Scopus subject areas

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