The application of carbon nanotubes in CMOS integrated circuits

Philip Ching Ho Chan

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

Abstract

With the complementary metal-oxide-semiconductor (CMOS) technology approaching its scaling limit, many novel devices are being investigated for the replacement of CMOS FET. Among them, carbon nanotubes show unique properties and are currently considered as a promising alternative material for the building blocks of future nanoelectronic. Performance of carbon nanotube field effect transistors (CNFET) can be competitive with Si MOSFET in the sub-20nm regime. With its superior material properties, CNT can also function as quantum wire and critical material for the integrated circuit interconnection. In this paper, we shall present some of the research we have done on the application of carbon nanotubes to the CMOS Integrated Circuits at the Hong Kong University of Science and Technology.
Original languageEnglish
Title of host publication2006 7th International Conference on Electronics Packaging Technology, ICEPT '06
DOIs
Publication statusPublished - 11 Oct 2007
Externally publishedYes
Event2006 7th International Conference on Electronics Packaging Technology, ICEPT '06 - Shanghai, China
Duration: 26 Aug 200629 Aug 2006

Conference

Conference2006 7th International Conference on Electronics Packaging Technology, ICEPT '06
CountryChina
CityShanghai
Period26/08/0629/08/06

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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