The application of bismuth-based oxides in organic-inorganic hybrid photovoltaic devices

Zhike Liu, Feng Yan

Research output: Journal article publicationJournal articleAcademic researchpeer-review

25 Citations (Scopus)


Bismuth-based ferroelectric oxide films including BiFeO3, Bi2WO6and BiVO4with different band structure are prepared by pulsed laser deposition method and used as n-type semiconductors in photovoltaic devices. The oxide films are combined with p-type organic semiconductor poly(3-hexylthiophene) to form bilayer heterojunctions and their photovoltaic effects are systematically studied. Compared with some other oxide semiconductors, such as ZnO or TiO2, the bismuth-based oxides exhibit wider absorption spectra and can induce higher external quantum efficiency, open circuit voltage, and power conversion efficiency of the hybrid devices, indicating that bismuth-based oxides are promising materials for photovoltaic devices.
Original languageEnglish
Pages (from-to)1944-1948
Number of pages5
JournalJournal of the American Ceramic Society
Issue number6
Publication statusPublished - 1 Jun 2012

ASJC Scopus subject areas

  • Ceramics and Composites
  • Geology
  • Geochemistry and Petrology
  • Materials Chemistry


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