TY - JOUR
T1 - Tensile strength of aluminium nitride films
AU - Zong, Deng Gang
AU - Ong, Chung Wo
AU - Aravind, Manju
AU - Tsang, Mei P.O.
AU - Choy, Chung Loong
AU - Lu, Deren
AU - Ma, Dejun
PY - 2004/11/1
Y1 - 2004/11/1
N2 - Two-layered aluminium nitride (AlN)/silicon nitride microbridges were fabricated for microbridge tests to evaluate the elastic modulus, residual stress and tensile strength of the AlN films. The silicon nitride layer was added to increase the robustness of the structure. In a microbridge test, load was applied to the centre of a microbridge and was gradually increased by a nano-indenter equipped with a wedge tip until the sample was broken, while displacement was recorded coherently. Measurements were performed on single-layered silicon nitride microbridges and two-layered AlN/silicon nitride microbridges respectively. The data were fitted to a theory to derive the elastic modulus, residual stress and tensile strength of the silicon nitride films and AlN films. For the AlN films, the three parameters were determined to be 200, 0.06 and 0.3 GPa, respectively. The values of elastic modulus obtained were consistent with those measured by conventional nano-indentation method. The tensile strength value can be used as a reference to reflect the maximum tolerable tensile stress of AlN films when they are used in micro- electromechanical devices.
AB - Two-layered aluminium nitride (AlN)/silicon nitride microbridges were fabricated for microbridge tests to evaluate the elastic modulus, residual stress and tensile strength of the AlN films. The silicon nitride layer was added to increase the robustness of the structure. In a microbridge test, load was applied to the centre of a microbridge and was gradually increased by a nano-indenter equipped with a wedge tip until the sample was broken, while displacement was recorded coherently. Measurements were performed on single-layered silicon nitride microbridges and two-layered AlN/silicon nitride microbridges respectively. The data were fitted to a theory to derive the elastic modulus, residual stress and tensile strength of the silicon nitride films and AlN films. For the AlN films, the three parameters were determined to be 200, 0.06 and 0.3 GPa, respectively. The values of elastic modulus obtained were consistent with those measured by conventional nano-indentation method. The tensile strength value can be used as a reference to reflect the maximum tolerable tensile stress of AlN films when they are used in micro- electromechanical devices.
UR - http://www.scopus.com/inward/record.url?scp=8344259821&partnerID=8YFLogxK
U2 - 10.1080/14786430412331283604
DO - 10.1080/14786430412331283604
M3 - Journal article
SN - 1478-6435
VL - 84
SP - 3353
EP - 3373
JO - Philosophical Magazine
JF - Philosophical Magazine
IS - 31
ER -