Temperature-dependent residual stresses in a hetero-epitaxial thin film system

M. Liu, Haihui Ruan, L. C. Zhang, A. Moridi

Research output: Journal article publicationJournal articleAcademic researchpeer-review

3 Citations (Scopus)


This paper investigates the temperature dependence of residual stresses in a hetero-epitaxial thin film on a sapphire substrate. The X-ray diffraction technique was employed and a theoretical analysis was also carried out. It was found that the magnitude of compressive residual stresses decrease with increasing the temperature, and that the rate of the change can be well predicted theoretically. It was discovered, however, that the residual stresses vary with the film thickness. For a film of 0.3 μm in thickness at all temperatures, the magnitudes of compressive stresses measured are greater than the theoretically predicted; but for that of 5 μm in thickness, the magnitudes measured become smaller than the theoretical. This leads to the conclusion that the mitigation of lattice mismatch, essentially through interface misfit dislocations, could have varied with the change of the film thickness.
Original languageEnglish
Pages (from-to)186-191
Number of pages6
JournalThin Solid Films
Publication statusPublished - 1 Jan 2015


  • Residual stress
  • Temperature-dependence
  • Thin film
  • X-ray diffraction

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

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