Temperature-dependent photoluminescence and electron field emission properties of AlN nanotip arrays

X. H. Ji, Q. Y. Zhang, Shu Ping Lau, H. X. Jiang, J. Y. Lin

Research output: Journal article publicationJournal articleAcademic researchpeer-review

34 Citations (Scopus)

Abstract

Large-scale single-crystalline AlN nanotip arrays have been fabricated via a facile catalysis-free approach using AlCl3 powder and NH3 as starting materials. These nanotips exhibit an intense broad ultraviolet emission centered at 3.28 eV. The field emission features a notable electron current with a low turn-on field. The turn-on and threshold electric field are found to decrease substantially from 7.7 to 3.9 V/μm and 7.9 to 4.1 V/μm, respectively, while the estimated field enhancement factor increases from 483 to 1884 with increasing the ambient-temperature from room temperature to 573 K. The dependence of the photoluminescence and electron field emission with temperature and the possible mechanism involved has systematically been investigated and thus discussed.
Original languageEnglish
Article number173106
JournalApplied Physics Letters
Volume94
Issue number17
DOIs
Publication statusPublished - 11 May 2009

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint

Dive into the research topics of 'Temperature-dependent photoluminescence and electron field emission properties of AlN nanotip arrays'. Together they form a unique fingerprint.

Cite this