Temperature dependent characteristics of all polymer thin-film transistors based on poly(9,9-dioctylfluorene-co-bithiophene)

Thin-film transistors based on poly(9,9-dioctylfluorene-co-bithiophene) have been studied in the temperature range from 130 to 300 K. In this temperature range both the field effect mobility and the drain current show thermally activated behavior. From the bias and temperature dependence of the drain current we deduce the presence of an exponential distribution of states above the dominant transport level.