Abstract
Thin-film transistors based on poly(9,9-dioctylfluorene-co-bithiophene) have been studied in the temperature range from 130 to 300 K. In this temperature range both the field effect mobility and the drain current show thermally activated behavior. From the bias and temperature dependence of the drain current we deduce the presence of an exponential distribution of states above the dominant transport level.
Original language | English |
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Article number | 064501 |
Journal | Journal of Applied Physics |
Volume | 101 |
Issue number | 6 |
DOIs | |
Publication status | Published - 8 Apr 2007 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy(all)