Abstract
The relationship between the bipolar resistive switching and the polarization reversal is investigated at various temperatures in the Au/BiFeO3/SrRuO3structure. It is found that the polarization-induced barrier variation in the Au/BiFeO3and BiFeO3/SrRuO3junctions decreases with decreasing temperature. This explains why the resistance-switching ratio decreases with decreasing temperature below 323 K and gives evidence that the polarization modulates the resistance state of the Au/BiFeO3/SrRuO3structure. Besides, the oxygen vacancies migration and/or the carrier trapping/detrapping mechanisms are also suggested to play a very important role in the resistive switching behavior in this structure as the temperature goes above 323 K.
| Original language | English |
|---|---|
| Article number | 143503 |
| Journal | Applied Physics Letters |
| Volume | 104 |
| Issue number | 14 |
| DOIs | |
| Publication status | Published - 7 Apr 2014 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Fingerprint
Dive into the research topics of 'Temperature-dependent and polarization-tuned resistive switching in Au/BiFeO3/SrRuO3junctions'. Together they form a unique fingerprint.Cite this
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver