Temperature-dependent and polarization-tuned resistive switching in Au/BiFeO3/SrRuO3junctions

Y. B. Lin; Z. B. Yan; X. B. Lu; Z. X. Lu; M. Zeng; Y. Chen; X. S. Gao; J. G. Wan; Jiyan Dai; J. M. Liu

doi:10.1063/1.4870813

Temperature-dependent and polarization-tuned resistive switching in Au/BiFeO₃/SrRuO₃junctions

Y. B. Lin, Z. B. Yan, X. B. Lu, Z. X. Lu, M. Zeng, Y. Chen, X. S. Gao, J. G. Wan, Jiyan Dai, J. M. Liu

Research output: Journal article publication › Journal article › Academic research › peer-review

60 Citations (Scopus)

Abstract

The relationship between the bipolar resistive switching and the polarization reversal is investigated at various temperatures in the Au/BiFeO3/SrRuO3structure. It is found that the polarization-induced barrier variation in the Au/BiFeO3and BiFeO3/SrRuO3junctions decreases with decreasing temperature. This explains why the resistance-switching ratio decreases with decreasing temperature below 323 K and gives evidence that the polarization modulates the resistance state of the Au/BiFeO3/SrRuO3structure. Besides, the oxygen vacancies migration and/or the carrier trapping/detrapping mechanisms are also suggested to play a very important role in the resistive switching behavior in this structure as the temperature goes above 323 K.

Original language	English
Article number	143503
Journal	Applied Physics Letters
Volume	104
Issue number	14
DOIs	https://doi.org/10.1063/1.4870813
Publication status	Published - 7 Apr 2014

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4870813

http://hdl.handle.net/10397/8401

Cite this

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title = "Temperature-dependent and polarization-tuned resistive switching in Au/BiFeO3/SrRuO3junctions",

abstract = "The relationship between the bipolar resistive switching and the polarization reversal is investigated at various temperatures in the Au/BiFeO3/SrRuO3structure. It is found that the polarization-induced barrier variation in the Au/BiFeO3and BiFeO3/SrRuO3junctions decreases with decreasing temperature. This explains why the resistance-switching ratio decreases with decreasing temperature below 323 K and gives evidence that the polarization modulates the resistance state of the Au/BiFeO3/SrRuO3structure. Besides, the oxygen vacancies migration and/or the carrier trapping/detrapping mechanisms are also suggested to play a very important role in the resistive switching behavior in this structure as the temperature goes above 323 K.",

author = "Lin, {Y. B.} and Yan, {Z. B.} and Lu, {X. B.} and Lu, {Z. X.} and M. Zeng and Y. Chen and Gao, {X. S.} and Wan, {J. G.} and Jiyan Dai and Liu, {J. M.}",

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T1 - Temperature-dependent and polarization-tuned resistive switching in Au/BiFeO3/SrRuO3junctions

AU - Lin, Y. B.

AU - Yan, Z. B.

AU - Lu, X. B.

AU - Lu, Z. X.

AU - Zeng, M.

AU - Chen, Y.

AU - Gao, X. S.

AU - Wan, J. G.

AU - Dai, Jiyan

AU - Liu, J. M.

PY - 2014/4/7

Y1 - 2014/4/7

N2 - The relationship between the bipolar resistive switching and the polarization reversal is investigated at various temperatures in the Au/BiFeO3/SrRuO3structure. It is found that the polarization-induced barrier variation in the Au/BiFeO3and BiFeO3/SrRuO3junctions decreases with decreasing temperature. This explains why the resistance-switching ratio decreases with decreasing temperature below 323 K and gives evidence that the polarization modulates the resistance state of the Au/BiFeO3/SrRuO3structure. Besides, the oxygen vacancies migration and/or the carrier trapping/detrapping mechanisms are also suggested to play a very important role in the resistive switching behavior in this structure as the temperature goes above 323 K.

AB - The relationship between the bipolar resistive switching and the polarization reversal is investigated at various temperatures in the Au/BiFeO3/SrRuO3structure. It is found that the polarization-induced barrier variation in the Au/BiFeO3and BiFeO3/SrRuO3junctions decreases with decreasing temperature. This explains why the resistance-switching ratio decreases with decreasing temperature below 323 K and gives evidence that the polarization modulates the resistance state of the Au/BiFeO3/SrRuO3structure. Besides, the oxygen vacancies migration and/or the carrier trapping/detrapping mechanisms are also suggested to play a very important role in the resistive switching behavior in this structure as the temperature goes above 323 K.

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U2 - 10.1063/1.4870813

DO - 10.1063/1.4870813

M3 - Journal article

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VL - 104

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

M1 - 143503

ER -

Temperature-dependent and polarization-tuned resistive switching in Au/BiFeO₃/SrRuO₃junctions

Abstract

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