Temperature-dependent and polarization-tuned resistive switching in Au/BiFeO3/SrRuO3junctions

Y. B. Lin, Z. B. Yan, X. B. Lu, Z. X. Lu, M. Zeng, Y. Chen, X. S. Gao, J. G. Wan, Jiyan Dai, J. M. Liu

Research output: Journal article publicationJournal articleAcademic researchpeer-review

58 Citations (Scopus)


The relationship between the bipolar resistive switching and the polarization reversal is investigated at various temperatures in the Au/BiFeO3/SrRuO3structure. It is found that the polarization-induced barrier variation in the Au/BiFeO3and BiFeO3/SrRuO3junctions decreases with decreasing temperature. This explains why the resistance-switching ratio decreases with decreasing temperature below 323 K and gives evidence that the polarization modulates the resistance state of the Au/BiFeO3/SrRuO3structure. Besides, the oxygen vacancies migration and/or the carrier trapping/detrapping mechanisms are also suggested to play a very important role in the resistive switching behavior in this structure as the temperature goes above 323 K.
Original languageEnglish
Article number143503
JournalApplied Physics Letters
Issue number14
Publication statusPublished - 7 Apr 2014

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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