Temperature Dependence of Sensing Characteristics for OTFT-Based Hydrogen Sensor

Bochang Li; P. T. Lai; W. M. Tang

doi:10.1109/TED.2020.2973288

Temperature Dependence of Sensing Characteristics for OTFT-Based Hydrogen Sensor

Bochang Li, P. T. Lai, W. M. Tang

Research output: Journal article publication › Journal article › Academic research › peer-review

3 Citations (Scopus)

Abstract

An organic thin-film transistor (OTFT)-based hydrogen sensor with palladium (Pd) source/drain (S/D) electrodes as the sensing medium is fabricated, and the effects of operating temperature on its sensing performance are investigated. The sensor exhibits a current decrease upon exposure to hydrogen, and a rapid and reversible H₂ response upon the introduction and removal of hydrogen is observed. Heating the sensor changes its electrical characteristics and thus its hydrogen sensitivity. It is found that the effects of temperature on the hydrogen solubility and sticking coefficient of the Pd electrodes are important factors determining the sensitivity at a high temperature of 90 °C, but the temperature dependences of carrier mobility and threshold voltage of the OTFT become dominant at lower temperatures of 60 °C and 30 °C. Moreover, shorter response time is realized at higher operating temperature because higher temperature accelerates the diffusion of H atoms in the Pd electrode. However, the recovery time does not show the same trend due to a reconstruction of the pentacene layer at high operating temperature.

Original language	English
Article number	9018105
Pages (from-to)	1776-1780
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	67
Issue number	4
DOIs	https://doi.org/10.1109/TED.2020.2973288
Publication status	Published - 1 Apr 2020

Keywords

High temperature
hydrogen sensor
organic thin-film transistor (OTFT)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

More information

10.1109/TED.2020.2973288

Cite this

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title = "Temperature Dependence of Sensing Characteristics for OTFT-Based Hydrogen Sensor",

abstract = "An organic thin-film transistor (OTFT)-based hydrogen sensor with palladium (Pd) source/drain (S/D) electrodes as the sensing medium is fabricated, and the effects of operating temperature on its sensing performance are investigated. The sensor exhibits a current decrease upon exposure to hydrogen, and a rapid and reversible H2 response upon the introduction and removal of hydrogen is observed. Heating the sensor changes its electrical characteristics and thus its hydrogen sensitivity. It is found that the effects of temperature on the hydrogen solubility and sticking coefficient of the Pd electrodes are important factors determining the sensitivity at a high temperature of 90 °C, but the temperature dependences of carrier mobility and threshold voltage of the OTFT become dominant at lower temperatures of 60 °C and 30 °C. Moreover, shorter response time is realized at higher operating temperature because higher temperature accelerates the diffusion of H atoms in the Pd electrode. However, the recovery time does not show the same trend due to a reconstruction of the pentacene layer at high operating temperature.",

keywords = "High temperature, hydrogen sensor, organic thin-film transistor (OTFT)",

author = "Bochang Li and Lai, {P. T.} and Tang, {W. M.}",

note = "Funding Information: Manuscript received January 9, 2020; accepted February 7, 2020. Date of publication February 28, 2020; date of current version March 24, 2020. This work was supported in part by the Research Grants Council (RGC) of the Hong Kong Special Administrative Region (HKSAR), China under Project PolyU 252013/14E, in part by the Seed Fund for Basic Research under Project 201611159275, and in part by the University Development Fund Nanotechnology Research Institute, University of Hong Kong, under Grant 00600009. The review of this article was arranged by Editor I. Kymissis. (Corresponding authors: P. T. Lai; W. M. Tang.) Bochang Li and P. T. Lai are with the Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong (e-mail: bcli@eee.hku.hk; laip@eee.hku.hk). Publisher Copyright: {\textcopyright} 1963-2012 IEEE. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.",

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N1 - Funding Information: Manuscript received January 9, 2020; accepted February 7, 2020. Date of publication February 28, 2020; date of current version March 24, 2020. This work was supported in part by the Research Grants Council (RGC) of the Hong Kong Special Administrative Region (HKSAR), China under Project PolyU 252013/14E, in part by the Seed Fund for Basic Research under Project 201611159275, and in part by the University Development Fund Nanotechnology Research Institute, University of Hong Kong, under Grant 00600009. The review of this article was arranged by Editor I. Kymissis. (Corresponding authors: P. T. Lai; W. M. Tang.) Bochang Li and P. T. Lai are with the Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong (e-mail: bcli@eee.hku.hk; laip@eee.hku.hk). Publisher Copyright: © 1963-2012 IEEE. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.

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N2 - An organic thin-film transistor (OTFT)-based hydrogen sensor with palladium (Pd) source/drain (S/D) electrodes as the sensing medium is fabricated, and the effects of operating temperature on its sensing performance are investigated. The sensor exhibits a current decrease upon exposure to hydrogen, and a rapid and reversible H2 response upon the introduction and removal of hydrogen is observed. Heating the sensor changes its electrical characteristics and thus its hydrogen sensitivity. It is found that the effects of temperature on the hydrogen solubility and sticking coefficient of the Pd electrodes are important factors determining the sensitivity at a high temperature of 90 °C, but the temperature dependences of carrier mobility and threshold voltage of the OTFT become dominant at lower temperatures of 60 °C and 30 °C. Moreover, shorter response time is realized at higher operating temperature because higher temperature accelerates the diffusion of H atoms in the Pd electrode. However, the recovery time does not show the same trend due to a reconstruction of the pentacene layer at high operating temperature.

AB - An organic thin-film transistor (OTFT)-based hydrogen sensor with palladium (Pd) source/drain (S/D) electrodes as the sensing medium is fabricated, and the effects of operating temperature on its sensing performance are investigated. The sensor exhibits a current decrease upon exposure to hydrogen, and a rapid and reversible H2 response upon the introduction and removal of hydrogen is observed. Heating the sensor changes its electrical characteristics and thus its hydrogen sensitivity. It is found that the effects of temperature on the hydrogen solubility and sticking coefficient of the Pd electrodes are important factors determining the sensitivity at a high temperature of 90 °C, but the temperature dependences of carrier mobility and threshold voltage of the OTFT become dominant at lower temperatures of 60 °C and 30 °C. Moreover, shorter response time is realized at higher operating temperature because higher temperature accelerates the diffusion of H atoms in the Pd electrode. However, the recovery time does not show the same trend due to a reconstruction of the pentacene layer at high operating temperature.

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Temperature Dependence of Sensing Characteristics for OTFT-Based Hydrogen Sensor

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Keywords

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