TEM Examination of a Specified Site Identified by X-SEM in Microelectronics Failure Analysis

Jiyan Dai; S. F. Tee; C. L. Tay; S. Ansari; E. Er; S. Redkar

TEM Examination of a Specified Site Identified by X-SEM in Microelectronics Failure Analysis

Jiyan Dai, S. F. Tee, C. L. Tay, S. Ansari, E. Er, S. Redkar

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

Abstract

In semiconductor failure analysis, there is a demand that after mechanical polishing and scanning electron microcopy (SEM) examination, the failure site needs to be analyzed by transmission electron microscope (TEM) for a detailed examination to find the root cause. In this paper, a fast and practical TEM sample preparation method for TEM examination of specific site identified by cross-section scanning electron microscope (SEM) is demonstrated for further structural analysis.

Original language	English
Title of host publication	Conference Proceedings from the International Symposium for Testing and Failure Analysis
Pages	121-123
Number of pages	3
Publication status	Published - 1 Dec 2001
Externally published	Yes
Event	Proceedings of the 27th International Symposium for Testing and Failure Analysis - Santa Clara, CA, United States Duration: 11 Nov 2001 → 15 Nov 2001

Conference

Conference	Proceedings of the 27th International Symposium for Testing and Failure Analysis
Country/Territory	United States
City	Santa Clara, CA
Period	11/11/01 → 15/11/01

ASJC Scopus subject areas

Control and Systems Engineering
Safety, Risk, Reliability and Quality
Electrical and Electronic Engineering

Cite this

@inproceedings{0930eb0b2b84426492826c555ec83c15,

title = "TEM Examination of a Specified Site Identified by X-SEM in Microelectronics Failure Analysis",

abstract = "In semiconductor failure analysis, there is a demand that after mechanical polishing and scanning electron microcopy (SEM) examination, the failure site needs to be analyzed by transmission electron microscope (TEM) for a detailed examination to find the root cause. In this paper, a fast and practical TEM sample preparation method for TEM examination of specific site identified by cross-section scanning electron microscope (SEM) is demonstrated for further structural analysis.",

author = "Jiyan Dai and Tee, {S. F.} and Tay, {C. L.} and S. Ansari and E. Er and S. Redkar",

year = "2001",

month = dec,

day = "1",

language = "English",

pages = "121--123",

booktitle = "Conference Proceedings from the International Symposium for Testing and Failure Analysis",

note = "Proceedings of the 27th International Symposium for Testing and Failure Analysis ; Conference date: 11-11-2001 Through 15-11-2001",

}

Dai, J, Tee, SF, Tay, CL, Ansari, S, Er, E & Redkar, S 2001, TEM Examination of a Specified Site Identified by X-SEM in Microelectronics Failure Analysis. in Conference Proceedings from the International Symposium for Testing and Failure Analysis. pp. 121-123, Proceedings of the 27th International Symposium for Testing and Failure Analysis, Santa Clara, CA, United States, 11/11/01.

TEM Examination of a Specified Site Identified by X-SEM in Microelectronics Failure Analysis. / Dai, Jiyan; Tee, S. F.; Tay, C. L. et al.

Conference Proceedings from the International Symposium for Testing and Failure Analysis. 2001. p. 121-123.

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

TY - GEN

T1 - TEM Examination of a Specified Site Identified by X-SEM in Microelectronics Failure Analysis

AU - Dai, Jiyan

AU - Tee, S. F.

AU - Tay, C. L.

AU - Ansari, S.

AU - Er, E.

AU - Redkar, S.

PY - 2001/12/1

Y1 - 2001/12/1

N2 - In semiconductor failure analysis, there is a demand that after mechanical polishing and scanning electron microcopy (SEM) examination, the failure site needs to be analyzed by transmission electron microscope (TEM) for a detailed examination to find the root cause. In this paper, a fast and practical TEM sample preparation method for TEM examination of specific site identified by cross-section scanning electron microscope (SEM) is demonstrated for further structural analysis.

AB - In semiconductor failure analysis, there is a demand that after mechanical polishing and scanning electron microcopy (SEM) examination, the failure site needs to be analyzed by transmission electron microscope (TEM) for a detailed examination to find the root cause. In this paper, a fast and practical TEM sample preparation method for TEM examination of specific site identified by cross-section scanning electron microscope (SEM) is demonstrated for further structural analysis.

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M3 - Conference article published in proceeding or book

SP - 121

EP - 123

BT - Conference Proceedings from the International Symposium for Testing and Failure Analysis

T2 - Proceedings of the 27th International Symposium for Testing and Failure Analysis

Y2 - 11 November 2001 through 15 November 2001

ER -

TEM Examination of a Specified Site Identified by X-SEM in Microelectronics Failure Analysis

Abstract

Conference

ASJC Scopus subject areas

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