TEM Examination of a Specified Site Identified by X-SEM in Microelectronics Failure Analysis

Jiyan Dai, S. F. Tee, C. L. Tay, S. Ansari, E. Er, S. Redkar

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

Abstract

In semiconductor failure analysis, there is a demand that after mechanical polishing and scanning electron microcopy (SEM) examination, the failure site needs to be analyzed by transmission electron microscope (TEM) for a detailed examination to find the root cause. In this paper, a fast and practical TEM sample preparation method for TEM examination of specific site identified by cross-section scanning electron microscope (SEM) is demonstrated for further structural analysis.
Original languageEnglish
Title of host publicationConference Proceedings from the International Symposium for Testing and Failure Analysis
Pages121-123
Number of pages3
Publication statusPublished - 1 Dec 2001
Externally publishedYes
EventProceedings of the 27th International Symposium for Testing and Failure Analysis - Santa Clara, CA, United States
Duration: 11 Nov 200115 Nov 2001

Conference

ConferenceProceedings of the 27th International Symposium for Testing and Failure Analysis
Country/TerritoryUnited States
CitySanta Clara, CA
Period11/11/0115/11/01

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Safety, Risk, Reliability and Quality
  • Electrical and Electronic Engineering

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