Synthesis, morphology and random laser action of ZnO nanostructures

L. Miao; S. Tanemura; Y. Ieda; M. Tanemura; Y. Hayashi; H. Y. Yang; Shu Ping Lau; B. K. Tay; Y. G. Cao

doi:10.1016/j.susc.2006.12.011

Synthesis, morphology and random laser action of ZnO nanostructures

L. Miao, S. Tanemura, Y. Ieda, M. Tanemura, Y. Hayashi, H. Y. Yang, Shu Ping Lau, B. K. Tay, Y. G. Cao

Research output: Journal article publication › Journal article › Academic research › peer-review

30 Citations (Scopus)

Abstract

Three-dimensional (3-D) ZnO random-wall nanostructures and one-dimensional (1-D) ZnO nanorods were prepared on silicon substrates by a simple solid-vapour phase thermal sublimation technique. Optical pumped random lasing has been observed in the ZnO random-wall arrays with a threshold intensity of 0.38 MW/cm2in the emission wavelength from 380 to 395 nm. The optical gain was attributed to the closed-loop scattering and light amplification of the ZnO random-wall. The experimental result suggests that the morphology of nanostructure is the key factor to effect random lasing.

Original language	English
Pages (from-to)	2660-2663
Number of pages	4
Journal	Surface Science
Volume	601
Issue number	13
DOIs	https://doi.org/10.1016/j.susc.2006.12.011
Publication status	Published - 1 Jul 2007
Externally published	Yes

Keywords

M.1. Zinc oxide
M.2. Nanostructure
M.3. Semiconducting surfaces
Random lasing
S.3. Evaporation and sublimation

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

More information

10.1016/j.susc.2006.12.011

Cite this

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title = "Synthesis, morphology and random laser action of ZnO nanostructures",

abstract = "Three-dimensional (3-D) ZnO random-wall nanostructures and one-dimensional (1-D) ZnO nanorods were prepared on silicon substrates by a simple solid-vapour phase thermal sublimation technique. Optical pumped random lasing has been observed in the ZnO random-wall arrays with a threshold intensity of 0.38 MW/cm2in the emission wavelength from 380 to 395 nm. The optical gain was attributed to the closed-loop scattering and light amplification of the ZnO random-wall. The experimental result suggests that the morphology of nanostructure is the key factor to effect random lasing.",

keywords = "M.1. Zinc oxide, M.2. Nanostructure, M.3. Semiconducting surfaces, Random lasing, S.3. Evaporation and sublimation",

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AU - Miao, L.

AU - Tanemura, S.

AU - Ieda, Y.

AU - Tanemura, M.

AU - Hayashi, Y.

AU - Yang, H. Y.

AU - Lau, Shu Ping

AU - Tay, B. K.

AU - Cao, Y. G.

PY - 2007/7/1

Y1 - 2007/7/1

N2 - Three-dimensional (3-D) ZnO random-wall nanostructures and one-dimensional (1-D) ZnO nanorods were prepared on silicon substrates by a simple solid-vapour phase thermal sublimation technique. Optical pumped random lasing has been observed in the ZnO random-wall arrays with a threshold intensity of 0.38 MW/cm2in the emission wavelength from 380 to 395 nm. The optical gain was attributed to the closed-loop scattering and light amplification of the ZnO random-wall. The experimental result suggests that the morphology of nanostructure is the key factor to effect random lasing.

AB - Three-dimensional (3-D) ZnO random-wall nanostructures and one-dimensional (1-D) ZnO nanorods were prepared on silicon substrates by a simple solid-vapour phase thermal sublimation technique. Optical pumped random lasing has been observed in the ZnO random-wall arrays with a threshold intensity of 0.38 MW/cm2in the emission wavelength from 380 to 395 nm. The optical gain was attributed to the closed-loop scattering and light amplification of the ZnO random-wall. The experimental result suggests that the morphology of nanostructure is the key factor to effect random lasing.

KW - M.1. Zinc oxide

KW - M.2. Nanostructure

KW - M.3. Semiconducting surfaces

KW - Random lasing

KW - S.3. Evaporation and sublimation

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DO - 10.1016/j.susc.2006.12.011

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JO - Surface Science

JF - Surface Science

IS - 13

ER -

Synthesis, morphology and random laser action of ZnO nanostructures

Abstract

Keywords

ASJC Scopus subject areas

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