Synthesis and properties of aluminum nitride nanostructures

Shu Ping Lau, X. H. Ji

Research output: Chapter in book / Conference proceedingChapter in an edited book (as author)Academic researchpeer-review

1 Citation (Scopus)

Abstract

Aluminum nitride (AlN) is a wide band gap semiconductor that has potential applications in both deep ultraviolet (UV) optical devices and high power electronics devices. We review the recent development of one-dimensional (1D) AlN nanostructures. Various synthesis strategies for AlN nanostructures are presented. We pay particular attention in the doping of AlN nanostructures. The magnetic and optical properties of the AlN nanostructures are studied in detail. The future prospect of 1D AlN nanostructures for deep UV light-emitting diodes is presented.
Original languageEnglish
Title of host publicationSemiconductor Nanostructures for Optoelectronic Devices
Subtitle of host publicationProcessing, Characterization and Applications
Pages103-136
Number of pages34
DOIs
Publication statusPublished - 8 Oct 2012

Publication series

NameNanoScience and Technology
Volume58
ISSN (Print)1434-4904

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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