Synthesis and characterization of porous polymeric low dielectric constant films

Yuhuan Xu; D. W. Zheng; Yipin Tsai; K. N. Tu; Bin Zhao; Q. Z. Liu; Maureen Brongo; Chung Wo Ong; Chung Loong Choy; George T.T. Sheng; C. H. Tung

doi:10.1007/s11664-001-0036-9

Synthesis and characterization of porous polymeric low dielectric constant films

Yuhuan Xu
, D. W. Zheng
, Yipin Tsai
, K. N. Tu
, Bin Zhao
, Q. Z. Liu
, Maureen Brongo
, Chung Wo Ong
, Chung Loong Choy
, George T.T. Sheng
, C. H. Tung

Research output: Journal article publication › Journal article › Academic research › peer-review

23 Citations (Scopus)

Abstract

This paper reports the synthesis and dielectric properties of a porous poly(arylether) material with an ultra-low dielectric constant for interlayer dielectric applications in microelectronics. The porous polymer films were successfully fabricated by a method of organic phase separation and evaporation. A dielectric constant k of 1.8 was achieved for a porous film with an estimated porosity of 40% and average pore size of 3 nm. Electrical and mechanical properties as well as coefficient of thermal expansion for both dense and porous polymer films were measured.

Original language	English
Pages (from-to)	309-313
Number of pages	5
Journal	Journal of Electronic Materials
Volume	30
Issue number	4
DOIs	https://doi.org/10.1007/s11664-001-0036-9
Publication status	Published - 1 Jan 2001

Keywords

Poly(arylene) ethers
Porous polymer film
Ultra-low dielectric constant

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

More information

10.1007/s11664-001-0036-9

Cite this

@article{a825e2a18191444091ea29f47b0ff4c9,

title = "Synthesis and characterization of porous polymeric low dielectric constant films",

abstract = "This paper reports the synthesis and dielectric properties of a porous poly(arylether) material with an ultra-low dielectric constant for interlayer dielectric applications in microelectronics. The porous polymer films were successfully fabricated by a method of organic phase separation and evaporation. A dielectric constant k of 1.8 was achieved for a porous film with an estimated porosity of 40\% and average pore size of 3 nm. Electrical and mechanical properties as well as coefficient of thermal expansion for both dense and porous polymer films were measured.",

keywords = "Poly(arylene) ethers, Porous polymer film, Ultra-low dielectric constant",

author = "Yuhuan Xu and Zheng, \{D. W.\} and Yipin Tsai and Tu, \{K. N.\} and Bin Zhao and Liu, \{Q. Z.\} and Maureen Brongo and Ong, \{Chung Wo\} and Choy, \{Chung Loong\} and Sheng, \{George T.T.\} and Tung, \{C. H.\}",

year = "2001",

month = jan,

day = "1",

doi = "10.1007/s11664-001-0036-9",

language = "English",

volume = "30",

pages = "309--313",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "4",

}

TY - JOUR

T1 - Synthesis and characterization of porous polymeric low dielectric constant films

AU - Xu, Yuhuan

AU - Zheng, D. W.

AU - Tsai, Yipin

AU - Tu, K. N.

AU - Zhao, Bin

AU - Liu, Q. Z.

AU - Brongo, Maureen

AU - Ong, Chung Wo

AU - Choy, Chung Loong

AU - Sheng, George T.T.

AU - Tung, C. H.

PY - 2001/1/1

Y1 - 2001/1/1

N2 - This paper reports the synthesis and dielectric properties of a porous poly(arylether) material with an ultra-low dielectric constant for interlayer dielectric applications in microelectronics. The porous polymer films were successfully fabricated by a method of organic phase separation and evaporation. A dielectric constant k of 1.8 was achieved for a porous film with an estimated porosity of 40% and average pore size of 3 nm. Electrical and mechanical properties as well as coefficient of thermal expansion for both dense and porous polymer films were measured.

AB - This paper reports the synthesis and dielectric properties of a porous poly(arylether) material with an ultra-low dielectric constant for interlayer dielectric applications in microelectronics. The porous polymer films were successfully fabricated by a method of organic phase separation and evaporation. A dielectric constant k of 1.8 was achieved for a porous film with an estimated porosity of 40% and average pore size of 3 nm. Electrical and mechanical properties as well as coefficient of thermal expansion for both dense and porous polymer films were measured.

KW - Poly(arylene) ethers

KW - Porous polymer film

KW - Ultra-low dielectric constant

UR - https://www.scopus.com/pages/publications/0035306609

U2 - 10.1007/s11664-001-0036-9

DO - 10.1007/s11664-001-0036-9

M3 - Journal article

SN - 0361-5235

VL - 30

SP - 309

EP - 313

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 4

ER -

Synthesis and characterization of porous polymeric low dielectric constant films

Abstract

Keywords

ASJC Scopus subject areas

More information

Other files and links

Fingerprint

Cite this