Abstract
This paper reports the synthesis and dielectric properties of a porous poly(arylether) material with an ultra-low dielectric constant for interlayer dielectric applications in microelectronics. The porous polymer films were successfully fabricated by a method of organic phase separation and evaporation. A dielectric constant k of 1.8 was achieved for a porous film with an estimated porosity of 40% and average pore size of 3 nm. Electrical and mechanical properties as well as coefficient of thermal expansion for both dense and porous polymer films were measured.
Original language | English |
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Pages (from-to) | 309-313 |
Number of pages | 5 |
Journal | Journal of Electronic Materials |
Volume | 30 |
Issue number | 4 |
DOIs | |
Publication status | Published - 1 Jan 2001 |
Keywords
- Poly(arylene) ethers
- Porous polymer film
- Ultra-low dielectric constant
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry