TY - JOUR
T1 - Synergistic passivation and stepped-dimensional perovskite analogs enable high-efficiency near-infrared light-emitting diodes
AU - Liu, Yongjie
AU - Tao, Chen
AU - Cao, Yu
AU - Chen, Liangyan
AU - Wang, Shuxin
AU - Li, Pei
AU - Wang, Cheng
AU - Liu, Chenwei
AU - Ye, Feihong
AU - Hu, Shengyong
AU - Xiao, Meng
AU - Gao, Zheng
AU - Gui, Pengbing
AU - Yao, Fang
AU - Dong, Kailian
AU - Li, Jiashuai
AU - Hu, Xuzhi
AU - Cong, Hengjiang
AU - Jia, Shuangfeng
AU - Wang, Ti
AU - Wang, Jianbo
AU - Li, Gang
AU - Huang, Wei
AU - Ke, Weijun
AU - Wang, Jianpu
AU - Fang, Guojia
N1 - Funding Information:
The authors acknowledge the support of the National High Technology Research and Development Program (2015AA050601, G.F.), the National Natural Science Foundation of China (12134010, G.F., 12174290 W.K.), the Natural Science Foundation of Hubei Province, China (2019AAA020, G.F., 2021CFB039, W.K.), and the Wuhan University mainland-Hongkong Joint Scientific Research Platform Seed Fund Program (202232, G.F.). We are very grateful to Dr. Xiaolu Zheng for the valuable discussion and precious original-manuscript revisions.
Publisher Copyright:
© 2022, The Author(s).
PY - 2022/12
Y1 - 2022/12
N2 - Formamidinium lead iodide (FAPbI3) perovskites are promising emitters for near-infrared light-emitting diodes. However, their performance is still limited by defect-assisted nonradiative recombination and band offset-induced carrier aggregation at the interface. Herein, we introduce a couple of cadmium salts with acetate or halide anion into the FAPbI3 perovskite precursors to synergistically passivate the material defects and optimize the device band structure. Particularly, the perovskite analogs, containing zero-dimensional formamidinium cadmium iodide, one-dimensional δ-FAPbI3, two-dimensional FA2FAn-1PbnI3n+1, and three-dimensional α-FAPbI3, can be obtained in one pot and play a pivotal and positive role in energy transfer in the formamidinium iodide-rich lead-based perovskite films. As a result, the near-infrared FAPbI3-based devices deliver a maximum external quantum efficiency of 24.1% together with substantially improved operational stability. Combining our findings on defect passivation and energy transfer, we also achieve near-infrared light communication with device twins of light emitting and unprecedented self-driven detection.
AB - Formamidinium lead iodide (FAPbI3) perovskites are promising emitters for near-infrared light-emitting diodes. However, their performance is still limited by defect-assisted nonradiative recombination and band offset-induced carrier aggregation at the interface. Herein, we introduce a couple of cadmium salts with acetate or halide anion into the FAPbI3 perovskite precursors to synergistically passivate the material defects and optimize the device band structure. Particularly, the perovskite analogs, containing zero-dimensional formamidinium cadmium iodide, one-dimensional δ-FAPbI3, two-dimensional FA2FAn-1PbnI3n+1, and three-dimensional α-FAPbI3, can be obtained in one pot and play a pivotal and positive role in energy transfer in the formamidinium iodide-rich lead-based perovskite films. As a result, the near-infrared FAPbI3-based devices deliver a maximum external quantum efficiency of 24.1% together with substantially improved operational stability. Combining our findings on defect passivation and energy transfer, we also achieve near-infrared light communication with device twins of light emitting and unprecedented self-driven detection.
UR - http://www.scopus.com/inward/record.url?scp=85143223848&partnerID=8YFLogxK
U2 - 10.1038/s41467-022-35218-0
DO - 10.1038/s41467-022-35218-0
M3 - Journal article
C2 - 36460647
AN - SCOPUS:85143223848
SN - 2041-1723
VL - 13
JO - Nature Communications
JF - Nature Communications
IS - 1
M1 - 7425
ER -