Switching properties of SrBi2Ta2O9thin films produced by metalorganic decomposition

X. B. Chen; Feng Yan; C. H. Li; Z. G. Zhang; J. S. Zhu; Y. N. Wang

doi:10.1063/1.125757

Switching properties of SrBi₂Ta₂O₉thin films produced by metalorganic decomposition

X. B. Chen, Feng Yan, C. H. Li, Z. G. Zhang, J. S. Zhu, Y. N. Wang

Research output: Journal article publication › Journal article › Academic research › peer-review

26 Citations (Scopus)

Abstract

The process of polarization reversal in a SrBi2Ta2O9, (SBT) thin film capacitor produced by a metalorganic decomposition method was investigated. The switching time (100-600 ns) and the reversible polarization have been measured at different voltages in the range of 0-5 V. It was found that by annealing the SBT sample in AR atmosphere at 400°C, the switching times were significantly reduced. This indicates that oxygen vacancies in the film speed up nucleation and growth of new domains.

Original language	English
Pages (from-to)	369-371
Number of pages	3
Journal	Applied Physics Letters
Volume	76
Issue number	3
DOIs	https://doi.org/10.1063/1.125757
Publication status	Published - 17 Jan 2000
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.125757

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abstract = "The process of polarization reversal in a SrBi2Ta2O9, (SBT) thin film capacitor produced by a metalorganic decomposition method was investigated. The switching time (100-600 ns) and the reversible polarization have been measured at different voltages in the range of 0-5 V. It was found that by annealing the SBT sample in AR atmosphere at 400°C, the switching times were significantly reduced. This indicates that oxygen vacancies in the film speed up nucleation and growth of new domains.",

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AU - Zhu, J. S.

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AB - The process of polarization reversal in a SrBi2Ta2O9, (SBT) thin film capacitor produced by a metalorganic decomposition method was investigated. The switching time (100-600 ns) and the reversible polarization have been measured at different voltages in the range of 0-5 V. It was found that by annealing the SBT sample in AR atmosphere at 400°C, the switching times were significantly reduced. This indicates that oxygen vacancies in the film speed up nucleation and growth of new domains.

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Switching properties of SrBi₂Ta₂O₉thin films produced by metalorganic decomposition

Abstract

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