Switching properties of SrBi2Ta2O9thin films produced by metalorganic decomposition

X. B. Chen, Feng Yan, C. H. Li, Z. G. Zhang, J. S. Zhu, Y. N. Wang

Research output: Journal article publicationJournal articleAcademic researchpeer-review

24 Citations (Scopus)

Abstract

The process of polarization reversal in a SrBi2Ta2O9, (SBT) thin film capacitor produced by a metalorganic decomposition method was investigated. The switching time (100-600 ns) and the reversible polarization have been measured at different voltages in the range of 0-5 V. It was found that by annealing the SBT sample in AR atmosphere at 400°C, the switching times were significantly reduced. This indicates that oxygen vacancies in the film speed up nucleation and growth of new domains.
Original languageEnglish
Pages (from-to)369-371
Number of pages3
JournalApplied Physics Letters
Volume76
Issue number3
DOIs
Publication statusPublished - 17 Jan 2000
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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