Switch-on undershoot current observed in thin film transistors

Feng Yan; P. Migliorato; V. Rana; R. Ishihara

Switch-on undershoot current observed in thin film transistors

Feng Yan, P. Migliorato, V. Rana, R. Ishihara

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

Abstract

The transient drain current of the single grain silicon TFTs with ECR-PECVD gate oxide has been measured. Switch-on undershoot current has been observed, which can be attributed to the motion of space charge in gate oxide.

Original language	English
Title of host publication	Proceedings of the International Display Manufacturing Conference and Exhibition, IDMC'05
Pages	456-458
Number of pages	3
Publication status	Published - 1 Dec 2005
Externally published	Yes
Event	International Display Manufacturing Conference and Exhibition, IDMC'05 - Taipei, Japan Duration: 21 Feb 2005 → 24 Feb 2005

Conference

Conference	International Display Manufacturing Conference and Exhibition, IDMC'05
Country/Territory	Japan
City	Taipei
Period	21/02/05 → 24/02/05

ASJC Scopus subject areas

General Engineering

Cite this

@inproceedings{1d5c96f40248419da5d375ef4ad703e0,

title = "Switch-on undershoot current observed in thin film transistors",

abstract = "The transient drain current of the single grain silicon TFTs with ECR-PECVD gate oxide has been measured. Switch-on undershoot current has been observed, which can be attributed to the motion of space charge in gate oxide.",

author = "Feng Yan and P. Migliorato and V. Rana and R. Ishihara",

year = "2005",

month = dec,

day = "1",

language = "English",

isbn = "9572852221",

pages = "456--458",

booktitle = "Proceedings of the International Display Manufacturing Conference and Exhibition, IDMC'05",

note = "International Display Manufacturing Conference and Exhibition, IDMC'05 ; Conference date: 21-02-2005 Through 24-02-2005",

}

TY - GEN

T1 - Switch-on undershoot current observed in thin film transistors

AU - Yan, Feng

AU - Migliorato, P.

AU - Rana, V.

AU - Ishihara, R.

PY - 2005/12/1

Y1 - 2005/12/1

N2 - The transient drain current of the single grain silicon TFTs with ECR-PECVD gate oxide has been measured. Switch-on undershoot current has been observed, which can be attributed to the motion of space charge in gate oxide.

AB - The transient drain current of the single grain silicon TFTs with ECR-PECVD gate oxide has been measured. Switch-on undershoot current has been observed, which can be attributed to the motion of space charge in gate oxide.

UR - http://www.scopus.com/inward/record.url?scp=33644637030&partnerID=8YFLogxK

M3 - Conference article published in proceeding or book

SN - 9572852221

SP - 456

EP - 458

BT - Proceedings of the International Display Manufacturing Conference and Exhibition, IDMC'05

T2 - International Display Manufacturing Conference and Exhibition, IDMC'05

Y2 - 21 February 2005 through 24 February 2005

ER -

Switch-on undershoot current observed in thin film transistors

Abstract

Conference

ASJC Scopus subject areas

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