Switch-on undershoot current observed in thin film transistors

Feng Yan, P. Migliorato, V. Rana, R. Ishihara

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

Abstract

The transient drain current of the single grain silicon TFTs with ECR-PECVD gate oxide has been measured. Switch-on undershoot current has been observed, which can be attributed to the motion of space charge in gate oxide.
Original languageEnglish
Title of host publicationProceedings of the International Display Manufacturing Conference and Exhibition, IDMC'05
Pages456-458
Number of pages3
Publication statusPublished - 1 Dec 2005
Externally publishedYes
EventInternational Display Manufacturing Conference and Exhibition, IDMC'05 - Taipei, Japan
Duration: 21 Feb 200524 Feb 2005

Conference

ConferenceInternational Display Manufacturing Conference and Exhibition, IDMC'05
CountryJapan
CityTaipei
Period21/02/0524/02/05

ASJC Scopus subject areas

  • Engineering(all)

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