TY - JOUR
T1 - Surface and subsurface response to the in-situ laser assistance in ultra-precision diamond turning of SiCp/Al composites
AU - Li, Yuhan
AU - Du, Hanheng
AU - Yip, Wai Sze
AU - Cheng, Cheung tong
AU - Zhou, Yan
AU - Lin, Jieqiong
AU - To, Suet
N1 - Funding Information:
This work was supported by the General Research Fund from the Research Grants Council of the Hong Kong Special Administrative Region (15221322), the National Natural Science Foundation of China (Project No.: U19A20104), Shenzhen Science and Technology Program (Project No.: JCYJ20210324131214039). The authors would also like to thank the funding support to the State Key Laboratories in Hong Kong from the Innovation and Technology Commission (ITC) of the Government of the Hong Kong Special Administrative Region (HKSAR), China and the Research Committee of The Hong Kong Polytechnic University (Project code: RK50).
Publisher Copyright:
© 2024 The Authors
PY - 2024/5
Y1 - 2024/5
N2 - This study focuses on the application of in-situ laser-assisted single-point diamond turning (ILAT) on SiCp/Al metal matrix composites (MMCs), renowned for their exceptional mechanical properties and difficult-to-cut nature. The surface and subsurface response to the in-situ laser assistance under a small uncut chip thickness (UCT) is investigated. The results demonstrate that appropriate laser energy can reduce subsurface crystal defects while maintaining surface quality during machining. As the laser power increases, the surface damage pattern shifts from cut-through to fracture, eventually leading to severe matrix deformation. Slight compressive stress is observed on the Al phase of surfaces machined with either conventional single-point diamond turning (SPDT) or ILAT. Al crystals near the machined surface and SiC particles in the SPDT sample exhibit a notable accumulation of dislocations. Laser assistance is beneficial for mitigating dislocations and improving the crystalline integrity of Al grains, while Al grains close to the machined surface in both SPDT and ILAT samples present comparable amounts of stacking faults. The findings enhance the understanding of surface and subsurface generation of SiCp/Al composites in ILAT, providing a reference for the application of ILAT on other MMCs.
AB - This study focuses on the application of in-situ laser-assisted single-point diamond turning (ILAT) on SiCp/Al metal matrix composites (MMCs), renowned for their exceptional mechanical properties and difficult-to-cut nature. The surface and subsurface response to the in-situ laser assistance under a small uncut chip thickness (UCT) is investigated. The results demonstrate that appropriate laser energy can reduce subsurface crystal defects while maintaining surface quality during machining. As the laser power increases, the surface damage pattern shifts from cut-through to fracture, eventually leading to severe matrix deformation. Slight compressive stress is observed on the Al phase of surfaces machined with either conventional single-point diamond turning (SPDT) or ILAT. Al crystals near the machined surface and SiC particles in the SPDT sample exhibit a notable accumulation of dislocations. Laser assistance is beneficial for mitigating dislocations and improving the crystalline integrity of Al grains, while Al grains close to the machined surface in both SPDT and ILAT samples present comparable amounts of stacking faults. The findings enhance the understanding of surface and subsurface generation of SiCp/Al composites in ILAT, providing a reference for the application of ILAT on other MMCs.
KW - In-situ laser-assisted machining
KW - Metal matrix composite
KW - Micro cutting of inhomogeneous materials
KW - Single point diamond turning
KW - Subsurface damages
UR - http://www.scopus.com/inward/record.url?scp=85193244571&partnerID=8YFLogxK
U2 - 10.1016/j.jmrt.2024.05.092
DO - 10.1016/j.jmrt.2024.05.092
M3 - Journal article
AN - SCOPUS:85193244571
SN - 2238-7854
VL - 30
SP - 7160
EP - 7170
JO - Journal of Materials Research and Technology
JF - Journal of Materials Research and Technology
ER -