Superior Dielectric Screening in Two-Dimensional MoS2Spirals

Thuc Hue Ly, Hyun Kim, Quoc Huy Thi, Shu Ping Lau, Jiong Zhao

Research output: Journal article publicationJournal articleAcademic researchpeer-review

3 Citations (Scopus)

Abstract

Metals have the best dielectric screening capability among all materials; however, it is usually difficult to fabricate continuous and uniform ultrathin (few-atomic-layer thickness) metal films. Conversely, high-quality atomic-thick semiconductor or semimetal materials (so called two-dimensional materials) such as graphene or MoS2can be readily obtained and robust in ambient conditions; however, their dielectric screening capabilities are greatly reduced by their reduced dimensionality. Particularly, in the vertical direction, the dielectric screening of two-dimensional materials is insufficient; thus, the performances of devices by two-dimensional materials were easily affected by the coulomb-scattering or other kind of sources. Herein, we propose that with a screw dislocation connecting the van der Waals layers in two-dimensional MoS2spiral structures, excellent dielectric screening in the vertical direction can be achieved. Our Kelvin force microscopy directly demonstrates that the external impurity charges can be perfectly screened by a theoretically minimum number of layers (two layers) in the MoS2spirals. This spiral structure-assisted screening approach paves new way to the design of high-performance ultrathin electrical and optical devices.
Original languageEnglish
Pages (from-to)37941-37946
Number of pages6
JournalACS Applied Materials and Interfaces
Volume9
Issue number43
DOIs
Publication statusPublished - 1 Nov 2017

Keywords

  • Kelvin force microscopy
  • molybdenum disulfide
  • screening
  • spiral
  • thickness dependence

ASJC Scopus subject areas

  • Materials Science(all)

Cite this