Sulphur doping: A facile approach to tune the electronic structure and optical properties of graphene quantum dots

Xueming Li, Shu Ping Lau, Libin Tang, Rongbin Ji, Peizhi Yang

Research output: Journal article publicationJournal articleAcademic researchpeer-review

203 Citations (Scopus)


Sulphur-doped carbon-based materials have attracted a great deal of interest because of their important applications in the fields of oxygen reduction reactions, hydrogen storage, supercapacitors, photocatalysts and lithium ion batteries. Here, we report a new member of sulphur-doped carbon-based materials, i.e. sulphur doped graphene quantum dots (S-GQDs). The S-GQDs were prepared by a hydrothermal method using fructose and sulphuric acid as source materials. Absorption and photoluminescence investigations show that inter-band crossings are responsible for the observed multiple emission peaks. The incorporation of ∼1 at% of S into the quantum dots can effectively modify the electronic structure of the S-GQDs by introducing S-related energy levels between π and π* of C. The additional energy levels in the S-GQDs lead to efficient and multiple emission peaks. This journal is
Original languageEnglish
Pages (from-to)5323-5328
Number of pages6
Issue number10
Publication statusPublished - 21 May 2014

ASJC Scopus subject areas

  • Materials Science(all)

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