Substrate orientation-induced epitaxial growth of face centered cubic Mo2C superconductive thin film

Zhi Zhang, Fan Zhang, Huichao Wang, Cheuk Ho Chan, Wei Lu, Jiyan Dai

Research output: Journal article publicationJournal articleAcademic researchpeer-review

26 Citations (Scopus)


In this study, we demonstrate the crystal structure-controlled growth of superconductive Mo2C thin films on a sapphire(0001) substrate in the pulsed-laser deposition. Detailed characterizations indicate that the thin film grown at 700 °C adopts the face centered cubic structure with the preferred orientation of the 〈111〉 direction. It was also demonstrated that the sapphire substrate and face centered cubic structured Mo2C thin film have the orientation relationship of {0006}sapphire//{111}Mo2C and [0110]sapphire//[110] Mo2C due to a small in-plane lattice mismatch between their corresponding lattice spacing perpendicular to the {111} atomic plane of the Mo2C thin film. Electrical transport measurements show that the Mo2C thin films exhibit superconducting characteristics. This study provides a practical approach to controlling the crystal structure of superconductive Mo2C thin films through the optimization of substrate orientation.
Original languageEnglish
Pages (from-to)10822-10827
Number of pages6
JournalJournal of Materials Chemistry C
Issue number41
Publication statusPublished - 1 Jan 2017

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Chemistry

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