Abstract
Super resolution optical near-field structure (super-RENS) is a useful new technique for the effective ultrahigh density near-field recording without diffraction limit. The SiN/Sb/SiN thin films provide a platform for the enhanced surface plasmon effects. The non-linearity of the photothermal transfer from the interface of Sb/SiN to the GeSbTe recording layer determines the effective threshold of the transition power. Recording marks less than 100 nm can be attained by adjusting the input laser power or the spacing layer of SiN.
| Original language | English |
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| Pages | 315-317 |
| Number of pages | 3 |
| Publication status | Published - 12 Jul 1999 |
| Externally published | Yes |
| Event | Proceedings of the 1999 Joint International Symposium on Optical Memory and Optical Optical Data Storage (ISOM/ODS'99) - Koloa, HI, USA Duration: 12 Jul 1999 → 15 Jul 1999 |
Conference
| Conference | Proceedings of the 1999 Joint International Symposium on Optical Memory and Optical Optical Data Storage (ISOM/ODS'99) |
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| City | Koloa, HI, USA |
| Period | 12/07/99 → 15/07/99 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering