Study of polarization switching in PZT films with RuO₂electrodes by conducting atomic force microscopy

Keyphrases

• RuO2 100%
• Polarization Switching 100%
• Conductive Atomic Force Microscopy (C-AFM) 100%
• As-deposited 66%
• Self-polarization 66%
• Si Substrate 33%
• Silica 33%
• Room Temperature 33%
• Hysteresis Loop 33%
• Film Thickness 33%
• Domain Structure 33%
• Lead Zirconate Titanate 33%
• As-deposited Films 33%
• Thickness Direction 33%
• Sol-gel 33%
• Pyroelectric Coefficient 33%
• Charged Defects 33%
• Piezoresponse 33%
• Piezoelectric Response 33%
• Structure-switching 33%
• Internal Field 33%
• Ruthenium Dioxide 33%

Engineering

• Atomic Force Microscopy 100%
• Piezoelectric 50%
• Hysteresis Loop 50%
• Deposited Film 50%
• Thickness Direction 50%
• Si Substrate 50%
• Internal Field 50%
• Titanate 50%
• Lead Zirconate 50%
• Room Temperature 50%
• Domain Structure 50%
• Silicon Dioxide 50%

Material Science

• Film 100%
• Atomic Force Microscopy 100%
• Sol-Gel 25%
• Lead Zirconate Titanate 25%
• Film Thickness 25%
• Piezoelectricity 25%
• Ruthenium 25%