Study of polarization switching in PZT films with RuO2electrodes by conducting atomic force microscopy

B. Wang; Kin Wing Kwok; H. L.W. Chan; C. L. Choy; K. Y. Tong; E. Z. Luo; J. B. Xu; I. H. Wilson

doi:10.1016/S1044-5803(02)00255-3

Study of polarization switching in PZT films with RuO₂electrodes by conducting atomic force microscopy

B. Wang
, Kin Wing Kwok
, H. L.W. Chan
, C. L. Choy
, K. Y. Tong
, E. Z. Luo
, J. B. Xu
, I. H. Wilson

Research output: Journal article publication › Journal article › Academic research › peer-review

3 Citations (Scopus)

Abstract

Sol-gel derived lead zirconate titanate (PbZr0.4Ti0.6O3, PZT) films, 2 μm thick, were deposited on ruthenium dioxide (RuO2)/SiO2/Si substrates. The domain structure and polarization switching of the PZT films were studied by conducting atomic force microscopy (AFM). Large self-polarization along the film thickness direction and asymmetric piezoresponse hysteresis loop were observed in the as-deposited RuO2/PZT/RuO2films. The room-temperature pyroelectric coefficient of the as-deposited films was about 230 μC/m2K. The internal field associated with charged defects was believed to be responsible for the self-polarization and asymmetric piezoelectric response in the as-deposited RuO2/PZT/RuO2films.

Original language	English
Pages (from-to)	249-253
Number of pages	5
Journal	Materials Characterization
Volume	48
Issue number	2-3
DOIs	https://doi.org/10.1016/S1044-5803(02)00255-3
Publication status	Published - 1 Apr 2002

Keywords

Internal field
Polarization switching
PZT
Self-polarization

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

More information

10.1016/S1044-5803(02)00255-3

Cite this

@article{d44f34fbb01944a09442c121d1a098da,

title = "Study of polarization switching in PZT films with RuO2electrodes by conducting atomic force microscopy",

abstract = "Sol-gel derived lead zirconate titanate (PbZr0.4Ti0.6O3, PZT) films, 2 μm thick, were deposited on ruthenium dioxide (RuO2)/SiO2/Si substrates. The domain structure and polarization switching of the PZT films were studied by conducting atomic force microscopy (AFM). Large self-polarization along the film thickness direction and asymmetric piezoresponse hysteresis loop were observed in the as-deposited RuO2/PZT/RuO2films. The room-temperature pyroelectric coefficient of the as-deposited films was about 230 μC/m2K. The internal field associated with charged defects was believed to be responsible for the self-polarization and asymmetric piezoelectric response in the as-deposited RuO2/PZT/RuO2films.",

keywords = "Internal field, Polarization switching, PZT, Self-polarization",

author = "B. Wang and Kwok, \{Kin Wing\} and Chan, \{H. L.W.\} and Choy, \{C. L.\} and Tong, \{K. Y.\} and Luo, \{E. Z.\} and Xu, \{J. B.\} and Wilson, \{I. H.\}",

year = "2002",

month = apr,

day = "1",

doi = "10.1016/S1044-5803(02)00255-3",

language = "English",

volume = "48",

pages = "249--253",

journal = "Materials Characterization",

issn = "1044-5803",

publisher = "Elsevier Inc.",

number = "2-3",

}

TY - JOUR

T1 - Study of polarization switching in PZT films with RuO2electrodes by conducting atomic force microscopy

AU - Wang, B.

AU - Kwok, Kin Wing

AU - Chan, H. L.W.

AU - Choy, C. L.

AU - Tong, K. Y.

AU - Luo, E. Z.

AU - Xu, J. B.

AU - Wilson, I. H.

PY - 2002/4/1

Y1 - 2002/4/1

N2 - Sol-gel derived lead zirconate titanate (PbZr0.4Ti0.6O3, PZT) films, 2 μm thick, were deposited on ruthenium dioxide (RuO2)/SiO2/Si substrates. The domain structure and polarization switching of the PZT films were studied by conducting atomic force microscopy (AFM). Large self-polarization along the film thickness direction and asymmetric piezoresponse hysteresis loop were observed in the as-deposited RuO2/PZT/RuO2films. The room-temperature pyroelectric coefficient of the as-deposited films was about 230 μC/m2K. The internal field associated with charged defects was believed to be responsible for the self-polarization and asymmetric piezoelectric response in the as-deposited RuO2/PZT/RuO2films.

AB - Sol-gel derived lead zirconate titanate (PbZr0.4Ti0.6O3, PZT) films, 2 μm thick, were deposited on ruthenium dioxide (RuO2)/SiO2/Si substrates. The domain structure and polarization switching of the PZT films were studied by conducting atomic force microscopy (AFM). Large self-polarization along the film thickness direction and asymmetric piezoresponse hysteresis loop were observed in the as-deposited RuO2/PZT/RuO2films. The room-temperature pyroelectric coefficient of the as-deposited films was about 230 μC/m2K. The internal field associated with charged defects was believed to be responsible for the self-polarization and asymmetric piezoelectric response in the as-deposited RuO2/PZT/RuO2films.

KW - Internal field

KW - Polarization switching

KW - PZT

KW - Self-polarization

UR - https://www.scopus.com/pages/publications/0036526370

U2 - 10.1016/S1044-5803(02)00255-3

DO - 10.1016/S1044-5803(02)00255-3

M3 - Journal article

SN - 1044-5803

VL - 48

SP - 249

EP - 253

JO - Materials Characterization

JF - Materials Characterization

IS - 2-3

ER -