Abstract
Sol-gel derived lead zirconate titanate (PbZr0.4Ti0.6O3, PZT) films, 2 μm thick, were deposited on ruthenium dioxide (RuO2)/SiO2/Si substrates. The domain structure and polarization switching of the PZT films were studied by conducting atomic force microscopy (AFM). Large self-polarization along the film thickness direction and asymmetric piezoresponse hysteresis loop were observed in the as-deposited RuO2/PZT/RuO2films. The room-temperature pyroelectric coefficient of the as-deposited films was about 230 μC/m2K. The internal field associated with charged defects was believed to be responsible for the self-polarization and asymmetric piezoelectric response in the as-deposited RuO2/PZT/RuO2films.
Original language | English |
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Pages (from-to) | 249-253 |
Number of pages | 5 |
Journal | Materials Characterization |
Volume | 48 |
Issue number | 2-3 |
DOIs | |
Publication status | Published - 1 Apr 2002 |
Keywords
- Internal field
- Polarization switching
- PZT
- Self-polarization
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering