Study of polarization switching in PZT films with RuO2electrodes by conducting atomic force microscopy

B. Wang; Kin Wing Kwok; H. L.W. Chan; C. L. Choy; K. Y. Tong; E. Z. Luo; J. B. Xu; I. H. Wilson

doi:10.1016/S1044-5803(02)00255-3

Study of polarization switching in PZT films with RuO₂electrodes by conducting atomic force microscopy

B. Wang, Kin Wing Kwok, H. L.W. Chan, C. L. Choy, K. Y. Tong, E. Z. Luo, J. B. Xu, I. H. Wilson

Research output: Journal article publication › Journal article › Academic research › peer-review

3 Citations (Scopus)

Abstract

Sol-gel derived lead zirconate titanate (PbZr0.4Ti0.6O3, PZT) films, 2 μm thick, were deposited on ruthenium dioxide (RuO2)/SiO2/Si substrates. The domain structure and polarization switching of the PZT films were studied by conducting atomic force microscopy (AFM). Large self-polarization along the film thickness direction and asymmetric piezoresponse hysteresis loop were observed in the as-deposited RuO2/PZT/RuO2films. The room-temperature pyroelectric coefficient of the as-deposited films was about 230 μC/m2K. The internal field associated with charged defects was believed to be responsible for the self-polarization and asymmetric piezoelectric response in the as-deposited RuO2/PZT/RuO2films.

Original language	English
Pages (from-to)	249-253
Number of pages	5
Journal	Materials Characterization
Volume	48
Issue number	2-3
DOIs	https://doi.org/10.1016/S1044-5803(02)00255-3
Publication status	Published - 1 Apr 2002

Keywords

Internal field
Polarization switching
PZT
Self-polarization

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

More information

10.1016/S1044-5803(02)00255-3

Cite this

@article{d44f34fbb01944a09442c121d1a098da,

title = "Study of polarization switching in PZT films with RuO2electrodes by conducting atomic force microscopy",

abstract = "Sol-gel derived lead zirconate titanate (PbZr0.4Ti0.6O3, PZT) films, 2 μm thick, were deposited on ruthenium dioxide (RuO2)/SiO2/Si substrates. The domain structure and polarization switching of the PZT films were studied by conducting atomic force microscopy (AFM). Large self-polarization along the film thickness direction and asymmetric piezoresponse hysteresis loop were observed in the as-deposited RuO2/PZT/RuO2films. The room-temperature pyroelectric coefficient of the as-deposited films was about 230 μC/m2K. The internal field associated with charged defects was believed to be responsible for the self-polarization and asymmetric piezoelectric response in the as-deposited RuO2/PZT/RuO2films.",

keywords = "Internal field, Polarization switching, PZT, Self-polarization",

author = "B. Wang and Kwok, {Kin Wing} and Chan, {H. L.W.} and Choy, {C. L.} and Tong, {K. Y.} and Luo, {E. Z.} and Xu, {J. B.} and Wilson, {I. H.}",

year = "2002",

month = apr,

day = "1",

doi = "10.1016/S1044-5803(02)00255-3",

language = "English",

volume = "48",

pages = "249--253",

journal = "Materials Characterization",

issn = "1044-5803",

publisher = "Elsevier Inc.",

number = "2-3",

}

Study of polarization switching in PZT films with RuO₂electrodes by conducting atomic force microscopy. / Wang, B.; Kwok, Kin Wing; Chan, H. L.W.; Choy, C. L.; Tong, K. Y.; Luo, E. Z.; Xu, J. B.; Wilson, I. H.

In: Materials Characterization, Vol. 48, No. 2-3, 01.04.2002, p. 249-253.

Research output: Journal article publication › Journal article › Academic research › peer-review

TY - JOUR

T1 - Study of polarization switching in PZT films with RuO2electrodes by conducting atomic force microscopy

AU - Wang, B.

AU - Kwok, Kin Wing

AU - Chan, H. L.W.

AU - Choy, C. L.

AU - Tong, K. Y.

AU - Luo, E. Z.

AU - Xu, J. B.

AU - Wilson, I. H.

PY - 2002/4/1

Y1 - 2002/4/1

N2 - Sol-gel derived lead zirconate titanate (PbZr0.4Ti0.6O3, PZT) films, 2 μm thick, were deposited on ruthenium dioxide (RuO2)/SiO2/Si substrates. The domain structure and polarization switching of the PZT films were studied by conducting atomic force microscopy (AFM). Large self-polarization along the film thickness direction and asymmetric piezoresponse hysteresis loop were observed in the as-deposited RuO2/PZT/RuO2films. The room-temperature pyroelectric coefficient of the as-deposited films was about 230 μC/m2K. The internal field associated with charged defects was believed to be responsible for the self-polarization and asymmetric piezoelectric response in the as-deposited RuO2/PZT/RuO2films.

AB - Sol-gel derived lead zirconate titanate (PbZr0.4Ti0.6O3, PZT) films, 2 μm thick, were deposited on ruthenium dioxide (RuO2)/SiO2/Si substrates. The domain structure and polarization switching of the PZT films were studied by conducting atomic force microscopy (AFM). Large self-polarization along the film thickness direction and asymmetric piezoresponse hysteresis loop were observed in the as-deposited RuO2/PZT/RuO2films. The room-temperature pyroelectric coefficient of the as-deposited films was about 230 μC/m2K. The internal field associated with charged defects was believed to be responsible for the self-polarization and asymmetric piezoelectric response in the as-deposited RuO2/PZT/RuO2films.

KW - Internal field

KW - Polarization switching

KW - PZT

KW - Self-polarization

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DO - 10.1016/S1044-5803(02)00255-3

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SP - 249

EP - 253

JO - Materials Characterization

JF - Materials Characterization

SN - 1044-5803

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