Study of polarization switching in PZT films with RuO2electrodes by conducting atomic force microscopy

B. Wang, Kin Wing Kwok, H. L.W. Chan, C. L. Choy, K. Y. Tong, E. Z. Luo, J. B. Xu, I. H. Wilson

Research output: Journal article publicationJournal articleAcademic researchpeer-review

3 Citations (Scopus)

Abstract

Sol-gel derived lead zirconate titanate (PbZr0.4Ti0.6O3, PZT) films, 2 μm thick, were deposited on ruthenium dioxide (RuO2)/SiO2/Si substrates. The domain structure and polarization switching of the PZT films were studied by conducting atomic force microscopy (AFM). Large self-polarization along the film thickness direction and asymmetric piezoresponse hysteresis loop were observed in the as-deposited RuO2/PZT/RuO2films. The room-temperature pyroelectric coefficient of the as-deposited films was about 230 μC/m2K. The internal field associated with charged defects was believed to be responsible for the self-polarization and asymmetric piezoelectric response in the as-deposited RuO2/PZT/RuO2films.
Original languageEnglish
Pages (from-to)249-253
Number of pages5
JournalMaterials Characterization
Volume48
Issue number2-3
DOIs
Publication statusPublished - 1 Apr 2002

Keywords

  • Internal field
  • Polarization switching
  • PZT
  • Self-polarization

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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