Study of parasitic and stray components induced ringings in class e power amplifiers in MHz range

Hao Zhang, Siu Chung Wong, Chi Kong Tse, Xikui Ma

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

5 Citations (Scopus)


For Class E power amplifier circuits operating at switching frequencies of the MHz range or higher, the parasitic capacitance of the MOS transistor switch becomes a significant part of the circuit adding to the usual intended circuit components. For the Class E power amplifier, this is often regarded as an advantage because the parasitic capacitor can be utilized for achieving zero voltage and current switchings, thus reducing the size of an external capacitor which has to be inserted. However, parallel connection of parasitic, stray and external capacitors may give rise to high-frequency ringings of the voltage across the switch, causing the circuit to deviate from the desired Class E operation. In this paper, the phenomenon and its underlying cause is studied by simulations and experiments. A circuit model of the amplifier with parasitic or stray components is developed to explain the phenomenon.
Original languageEnglish
Title of host publicationProceedings of the 2005 European Conference on Circuit Theory and Design
Number of pages4
Publication statusPublished - 1 Dec 2005
Event2005 European Conference on Circuit Theory and Design - Cork, Ireland
Duration: 28 Aug 20052 Sep 2005


Conference2005 European Conference on Circuit Theory and Design

ASJC Scopus subject areas

  • Engineering(all)

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