Study of nanoscale recorded marks on phase-change recording layers and the interactions with surroundings

S.K. Lin, I.C. Lin, S.Y. Chen, H.W. Hsu, Din-ping Tsai

Research output: Journal article publicationJournal articleAcademic researchpeer-review

13 Citations (Scopus)

Abstract

Conductive-atomic force microscopy (C-AFM) has been used for studying nanoscale recorded marks with different length on the phase-change recording layer of optical disks. Through C-AFM images, a comparison of nanoscale recorded marks on phase-change recording layer under different writing strategies and writing power has been taken. The comparison can help analyze the combination of writing strategy, writing power and laser pulse width. The various lengths of recorded marks for high density data storage have also been found out. The interactions between phase-change recording layers and their surroundings have also been studied. This study opens up a possibility to improve the capacity of data storage in today's commercial optical disks. © 2007 IEEE.
Original languageEnglish
Pages (from-to)861-863
Number of pages3
JournalIEEE Transactions on Magnetics
Volume43
Issue number2
DOIs
Publication statusPublished - 1 Feb 2007
Externally publishedYes

Keywords

  • Conductive-atomic force microscopy (C-AFM)
  • DVD
  • Optical disk
  • Phase-change recording layer
  • Recorded mark
  • Writing strategy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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