Study of interfacial reaction and its impact on electric properties of Hf-Al-O high-k gate dielectric thin films grown on Si

P. F. Lee, Jiyan Dai, K. H. Wong, H. L.W. Chan, C. L. Choy

Research output: Journal article publicationJournal articleAcademic researchpeer-review

35 Citations (Scopus)


Amorphous Hf-Al-O thin films were deposited on p-type (100) Si substrates by pulsed laser deposition. Transmission electron microscopy (TEM) was used to study the interfacial reaction between the Hf-Al-O films and the Si substrates. The Al oxide present in the films was found to retard the formation of crystalline HfO2. The impact of silicide formation at the interface on the electric properties was studied using high-frequency capacitance-voltage measurements.
Original languageEnglish
Pages (from-to)2419-2421
Number of pages3
JournalApplied Physics Letters
Issue number15
Publication statusPublished - 14 Apr 2003

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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