Study of interfacial reaction and its impact on electric properties of Hf-Al-O high-k gate dielectric thin films grown on Si

P. F. Lee; Jiyan Dai; K. H. Wong; H. L.W. Chan; C. L. Choy

doi:10.1063/1.1566796

Study of interfacial reaction and its impact on electric properties of Hf-Al-O high-k gate dielectric thin films grown on Si

P. F. Lee, Jiyan Dai, K. H. Wong, H. L.W. Chan, C. L. Choy

Research output: Journal article publication › Journal article › Academic research › peer-review

37 Citations (Scopus)

Abstract

Amorphous Hf-Al-O thin films were deposited on p-type (100) Si substrates by pulsed laser deposition. Transmission electron microscopy (TEM) was used to study the interfacial reaction between the Hf-Al-O films and the Si substrates. The Al oxide present in the films was found to retard the formation of crystalline HfO2. The impact of silicide formation at the interface on the electric properties was studied using high-frequency capacitance-voltage measurements.

Original language	English
Pages (from-to)	2419-2421
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	15
DOIs	https://doi.org/10.1063/1.1566796
Publication status	Published - 14 Apr 2003

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1566796

http://hdl.handle.net/10397/430

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AU - Choy, C. L.

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AB - Amorphous Hf-Al-O thin films were deposited on p-type (100) Si substrates by pulsed laser deposition. Transmission electron microscopy (TEM) was used to study the interfacial reaction between the Hf-Al-O films and the Si substrates. The Al oxide present in the films was found to retard the formation of crystalline HfO2. The impact of silicide formation at the interface on the electric properties was studied using high-frequency capacitance-voltage measurements.

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Study of interfacial reaction and its impact on electric properties of Hf-Al-O high-k gate dielectric thin films grown on Si

Abstract

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