Amorphous Hf-Al-O thin films were deposited on p-type (100) Si substrates by pulsed laser deposition. Transmission electron microscopy (TEM) was used to study the interfacial reaction between the Hf-Al-O films and the Si substrates. The Al oxide present in the films was found to retard the formation of crystalline HfO2. The impact of silicide formation at the interface on the electric properties was studied using high-frequency capacitance-voltage measurements.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)