Study of InGaN/GaN light emitting diodes with step-graded electron blocking layer

Chao Liu; Zhiwei Ren; Xin Chen; Bijun Zhao; Xingfu Wang; Yian Yin; Shuti Li

doi:10.1109/LPT.2013.2290124

Study of InGaN/GaN light emitting diodes with step-graded electron blocking layer

Chao Liu, Zhiwei Ren, Xin Chen, Bijun Zhao, Xingfu Wang, Yian Yin, Shuti Li

Department of Electrical and Electronic Engineering

Research output: Journal article publication › Journal article › Academic research › peer-review

21 Citations (Scopus)

Abstract

Step-graded AlGaN electron blocking layers (EBLs) have been designed to replace the original AlGaN EBL in blue light emitting diodes (LEDs). The step-graded EBL with increasing Al composition along the growth direction (IEBL) leads to inferior optical performance in the fabricated LEDs, whereas the step-graded EBL with decreasing Al composition (DEBL) results in enhanced light output power and reduced efficiency droop, compared with the original EBL. The simulation results indicate enhanced hole injection and electron confinement by DEBL, which accounts for improved performance. On the contrary, insufficient electron blocking and hole injection by IEBL lead to inferior performance.

Original language	English
Article number	6693791
Pages (from-to)	134-137
Number of pages	4
Journal	IEEE Photonics Technology Letters
Volume	26
Issue number	2
DOIs	https://doi.org/10.1109/LPT.2013.2290124
Publication status	Published - 15 Jan 2014

Keywords

efficiency droop
Electron blocking layer
light emitting diodes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

More information

10.1109/LPT.2013.2290124

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title = "Study of InGaN/GaN light emitting diodes with step-graded electron blocking layer",

abstract = "Step-graded AlGaN electron blocking layers (EBLs) have been designed to replace the original AlGaN EBL in blue light emitting diodes (LEDs). The step-graded EBL with increasing Al composition along the growth direction (IEBL) leads to inferior optical performance in the fabricated LEDs, whereas the step-graded EBL with decreasing Al composition (DEBL) results in enhanced light output power and reduced efficiency droop, compared with the original EBL. The simulation results indicate enhanced hole injection and electron confinement by DEBL, which accounts for improved performance. On the contrary, insufficient electron blocking and hole injection by IEBL lead to inferior performance.",

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AU - Liu, Chao

AU - Ren, Zhiwei

AU - Chen, Xin

AU - Zhao, Bijun

AU - Wang, Xingfu

AU - Yin, Yian

AU - Li, Shuti

PY - 2014/1/15

Y1 - 2014/1/15

N2 - Step-graded AlGaN electron blocking layers (EBLs) have been designed to replace the original AlGaN EBL in blue light emitting diodes (LEDs). The step-graded EBL with increasing Al composition along the growth direction (IEBL) leads to inferior optical performance in the fabricated LEDs, whereas the step-graded EBL with decreasing Al composition (DEBL) results in enhanced light output power and reduced efficiency droop, compared with the original EBL. The simulation results indicate enhanced hole injection and electron confinement by DEBL, which accounts for improved performance. On the contrary, insufficient electron blocking and hole injection by IEBL lead to inferior performance.

AB - Step-graded AlGaN electron blocking layers (EBLs) have been designed to replace the original AlGaN EBL in blue light emitting diodes (LEDs). The step-graded EBL with increasing Al composition along the growth direction (IEBL) leads to inferior optical performance in the fabricated LEDs, whereas the step-graded EBL with decreasing Al composition (DEBL) results in enhanced light output power and reduced efficiency droop, compared with the original EBL. The simulation results indicate enhanced hole injection and electron confinement by DEBL, which accounts for improved performance. On the contrary, insufficient electron blocking and hole injection by IEBL lead to inferior performance.

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KW - Electron blocking layer

KW - light emitting diodes

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JO - IEEE Photonics Technology Letters

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Study of InGaN/GaN light emitting diodes with step-graded electron blocking layer

Abstract

Keywords

ASJC Scopus subject areas

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